CONTROLLED-AVALANCHE SUPERLATTICE TRANSISTOR.

Albert Chin; Pallab Bhattacharya

doi:10.1109/CORNEL.1987.721235

CONTROLLED-AVALANCHE SUPERLATTICE TRANSISTOR.

Albert Chin^*, Pallab Bhattacharya

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

Abstract

An n-p-n bipolar avalanche transistor is proposed. Controlled avalanche and large current output are achieved by incorporating in the collector junction a few periods of a symmetric or asymmetric multi-quantum-well in which electrons predominantly multiply. The theory of operation, materials growth by molecular beam epitaxy, and impact ionization data on the quantum-well and device performance are described. Optical gains as high as 140 are measured in these transistors.

Original language	English
Pages	255-264
Number of pages	10
DOIs	https://doi.org/10.1109/CORNEL.1987.721235
State	Published - 1 Dec 1987

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10.1109/CORNEL.1987.721235

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title = "CONTROLLED-AVALANCHE SUPERLATTICE TRANSISTOR.",

abstract = "An n-p-n bipolar avalanche transistor is proposed. Controlled avalanche and large current output are achieved by incorporating in the collector junction a few periods of a symmetric or asymmetric multi-quantum-well in which electrons predominantly multiply. The theory of operation, materials growth by molecular beam epitaxy, and impact ionization data on the quantum-well and device performance are described. Optical gains as high as 140 are measured in these transistors.",

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N2 - An n-p-n bipolar avalanche transistor is proposed. Controlled avalanche and large current output are achieved by incorporating in the collector junction a few periods of a symmetric or asymmetric multi-quantum-well in which electrons predominantly multiply. The theory of operation, materials growth by molecular beam epitaxy, and impact ionization data on the quantum-well and device performance are described. Optical gains as high as 140 are measured in these transistors.

AB - An n-p-n bipolar avalanche transistor is proposed. Controlled avalanche and large current output are achieved by incorporating in the collector junction a few periods of a symmetric or asymmetric multi-quantum-well in which electrons predominantly multiply. The theory of operation, materials growth by molecular beam epitaxy, and impact ionization data on the quantum-well and device performance are described. Optical gains as high as 140 are measured in these transistors.

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CONTROLLED-AVALANCHE SUPERLATTICE TRANSISTOR.

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