An n-p-n bipolar avalanche transistor is proposed. Controlled avalanche and large current output are achieved by incorporating in the collector junction a few periods of a symmetric or asymmetric multi-quantum-well in which electrons predominantly multiply. The theory of operation, materials growth by molecular beam epitaxy, and impact ionization data on the quantum-well and device performance are described. Optical gains as high as 140 are measured in these transistors.
|Number of pages||10|
|State||Published - 1 Dec 1987|