Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

J. S. Wang; Kuo-Jui Lin; R. S. Hsiao; C. S. Yang; C. M. Lai; C. Y. Liang; H. Y. Liu; T. T. Chen; Y. F. Chen; J. Y. Chi; Jenn-Fang Chen

doi:10.1007/s00340-005-1975-2

Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

J. S. Wang^*, Kuo-Jui Lin, R. S. Hsiao, C. S. Yang, C. M. Lai, C. Y. Liang, H. Y. Liu, T. T. Chen, Y. F. Chen, J. Y. Chi, Jenn-Fang Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

High-power 3μm-wide narrow-ridge-waveguide lasers with ten stacks of electronic vertically coupled InAs/GaAs quantum dots in the active region were demonstrated. Unlike that from conventional uncoupled InAs quantum dot lasers, a narrow lasing spectrum was observed because the carriers tunneled in the vertical direction. Continuous-wave operation in single lateral mode yielded a kink-free output power of 320 mW with an efficiency of 0.46 W/A , and a sensitivity of lasing wavelength to temperature of 0.28 nm/K.

Original language	English
Pages (from-to)	1097-1100
Number of pages	4
Journal	Applied Physics B: Lasers and Optics
Volume	81
Issue number	8
DOIs	https://doi.org/10.1007/s00340-005-1975-2
State	Published - 25 Oct 2005

Keywords

GaAs
Lasing Spectrum
Single Mode Operation
Continuous Wave Operation
High Excitation Power

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Wang, J. S., Lin, K.-J., Hsiao, R. S., Yang, C. S., Lai, C. M., Liang, C. Y., Liu, H. Y., Chen, T. T., Chen, Y. F., Chi, J. Y., & Chen, J.-F. (2005). Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers. Applied Physics B: Lasers and Optics, 81(8), 1097-1100. https://doi.org/10.1007/s00340-005-1975-2

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title = "Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers",

abstract = "High-power 3μm-wide narrow-ridge-waveguide lasers with ten stacks of electronic vertically coupled InAs/GaAs quantum dots in the active region were demonstrated. Unlike that from conventional uncoupled InAs quantum dot lasers, a narrow lasing spectrum was observed because the carriers tunneled in the vertical direction. Continuous-wave operation in single lateral mode yielded a kink-free output power of 320 mW with an efficiency of 0.46 W/A , and a sensitivity of lasing wavelength to temperature of 0.28 nm/K.",

keywords = "GaAs, Lasing Spectrum, Single Mode Operation, Continuous Wave Operation, High Excitation Power",

author = "Wang, {J. S.} and Kuo-Jui Lin and Hsiao, {R. S.} and Yang, {C. S.} and Lai, {C. M.} and Liang, {C. Y.} and Liu, {H. Y.} and Chen, {T. T.} and Chen, {Y. F.} and Chi, {J. Y.} and Jenn-Fang Chen",

year = "2005",

month = oct,

day = "25",

doi = "10.1007/s00340-005-1975-2",

language = "English",

volume = "81",

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journal = "Applied Physics B: Lasers and Optics",

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Wang, JS, Lin, K-J, Hsiao, RS, Yang, CS, Lai, CM, Liang, CY, Liu, HY, Chen, TT, Chen, YF, Chi, JY & Chen, J-F 2005, 'Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers', Applied Physics B: Lasers and Optics, vol. 81, no. 8, pp. 1097-1100. https://doi.org/10.1007/s00340-005-1975-2

TY - JOUR

T1 - Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

AU - Wang, J. S.

AU - Lin, Kuo-Jui

AU - Hsiao, R. S.

AU - Yang, C. S.

AU - Lai, C. M.

AU - Liang, C. Y.

AU - Liu, H. Y.

AU - Chen, T. T.

AU - Chen, Y. F.

AU - Chi, J. Y.

AU - Chen, Jenn-Fang

PY - 2005/10/25

Y1 - 2005/10/25

N2 - High-power 3μm-wide narrow-ridge-waveguide lasers with ten stacks of electronic vertically coupled InAs/GaAs quantum dots in the active region were demonstrated. Unlike that from conventional uncoupled InAs quantum dot lasers, a narrow lasing spectrum was observed because the carriers tunneled in the vertical direction. Continuous-wave operation in single lateral mode yielded a kink-free output power of 320 mW with an efficiency of 0.46 W/A , and a sensitivity of lasing wavelength to temperature of 0.28 nm/K.

AB - High-power 3μm-wide narrow-ridge-waveguide lasers with ten stacks of electronic vertically coupled InAs/GaAs quantum dots in the active region were demonstrated. Unlike that from conventional uncoupled InAs quantum dot lasers, a narrow lasing spectrum was observed because the carriers tunneled in the vertical direction. Continuous-wave operation in single lateral mode yielded a kink-free output power of 320 mW with an efficiency of 0.46 W/A , and a sensitivity of lasing wavelength to temperature of 0.28 nm/K.

KW - GaAs

KW - Lasing Spectrum

KW - Single Mode Operation

KW - Continuous Wave Operation

KW - High Excitation Power

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U2 - 10.1007/s00340-005-1975-2

DO - 10.1007/s00340-005-1975-2

M3 - Article

AN - SCOPUS:28044450157

SN - 0946-2171

VL - 81

SP - 1097

EP - 1100

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 8

ER -

Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

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Keywords

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