Abstract
Reactions between Si and thin films of rare-earth metals (Gd, Dy, Ho, Er, plus Y and La) in the temperature range of 275-900°C have been studied by using x-ray diffraction and ion backscattering spectrometry. The disilicides of these metals are apparently the first phase to form, forming rapidly within a narrow temperature range (325-400°C), and are stable up to 900°C. The growth does not follow a layered growth mode.
Original language | English |
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Pages (from-to) | 535-537 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 38 |
Issue number | 7 |
DOIs | |
State | Published - 1 Dec 1981 |