Contact for shallow junctions

King-Ning Tu

doi:10.1016/0040-6090(86)90160-4

Contact for shallow junctions

King-Ning Tu^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated.

Original language	English
Pages (from-to)	71-78
Number of pages	8
Journal	Thin Solid Films
Volume	140
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(86)90160-4
State	Published - 16 Jun 1986

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title = "Contact for shallow junctions",

abstract = "A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated.",

author = "King-Ning Tu",

year = "1986",

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doi = "10.1016/0040-6090(86)90160-4",

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AU - Tu, King-Ning

PY - 1986/6/16

Y1 - 1986/6/16

N2 - A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated.

AB - A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated.

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U2 - 10.1016/0040-6090(86)90160-4

DO - 10.1016/0040-6090(86)90160-4

M3 - Article

AN - SCOPUS:0022079094

SN - 0040-6090

VL - 140

SP - 71

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Contact for shallow junctions

Abstract

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