Abstract
This paper examines the electrical properties of V-doped SrZrO3 sputtered films showing bistable on/off resistive switching. The temperature dependence of dc sweep I-V data in the range of 25-100°C implies the prominent role played by the off-state conduction in determining the R-switch ratio. The defects in off-state are investigated via Frenkel-Poole relation and the associated trap energy extraction. It is found that the oxygen vacancies are the possible major defects in off-state and are verified by the treatment of N2 and O2 annealing ambience hereafter. The nearly unchanged currents suggest the relatively more stable nature in on-state, which is consistent with the following findings: 1) the frequently observed I-V jiggle during on to off switching, 2) successful forming only found for sweep direction to on-state, 3) the better thermal disturbance immunity by longer retention for on-state, 4) the shorter pulse width needed to on-state switching for electric pulse induced resistance (EPIR) effect.
Original language | English |
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Pages (from-to) | 21-26 |
Number of pages | 6 |
Journal | Ferroelectrics |
Volume | 385 |
Issue number | 1 PART 6 |
DOIs | |
State | Published - 1 Dec 2009 |
Event | 6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan Duration: 2 Aug 2008 → 6 Aug 2008 |