Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography

Shyi Long Shy; Tien-Sheng Chao; Tan F. Lei; Shaw An Chen; Wen An Loong; Chun Yen Chang

doi:10.1117/12.262831

Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography

Shyi Long Shy^*, Tien-Sheng Chao, Tan F. Lei, Shaw An Chen, Wen An Loong, Chun Yen Chang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In this paper, the deep submicron complementary metal-oxide- semiconductor (CMOS) devices were fabricated. A conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography is used for direct writing the critical polysilicon gate level. Most of the specification of the designed CMOS parameters are met. The optimum conditions for submicron to 0.15 micrometers line/space of polysilicon gate using PAPSAH as charge dissipation layer for e-beam lithography are also established.

Original language	English
Pages (from-to)	454-465
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2884
DOIs	https://doi.org/10.1117/12.262831
State	Published - 1996
Event	16th Annual BACUS Symposium on Photomask Technology and Management - Redwood City, CA, United States Duration: 18 Sep 1996 → 18 Sep 1996

Keywords

Electron beam lithography
Mix-and-match lithography
Poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH)

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10.1117/12.262831

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title = "Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography",

abstract = "In this paper, the deep submicron complementary metal-oxide- semiconductor (CMOS) devices were fabricated. A conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography is used for direct writing the critical polysilicon gate level. Most of the specification of the designed CMOS parameters are met. The optimum conditions for submicron to 0.15 micrometers line/space of polysilicon gate using PAPSAH as charge dissipation layer for e-beam lithography are also established.",

keywords = "Electron beam lithography, Mix-and-match lithography, Poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH)",

author = "Shy, {Shyi Long} and Tien-Sheng Chao and Lei, {Tan F.} and Chen, {Shaw An} and Loong, {Wen An} and Chang, {Chun Yen}",

year = "1996",

doi = "10.1117/12.262831",

language = "English",

volume = "2884",

pages = "454--465",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "16th Annual BACUS Symposium on Photomask Technology and Management ; Conference date: 18-09-1996 Through 18-09-1996",

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T1 - Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography

AU - Shy, Shyi Long

AU - Chao, Tien-Sheng

AU - Lei, Tan F.

AU - Chen, Shaw An

AU - Loong, Wen An

AU - Chang, Chun Yen

PY - 1996

Y1 - 1996

N2 - In this paper, the deep submicron complementary metal-oxide- semiconductor (CMOS) devices were fabricated. A conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography is used for direct writing the critical polysilicon gate level. Most of the specification of the designed CMOS parameters are met. The optimum conditions for submicron to 0.15 micrometers line/space of polysilicon gate using PAPSAH as charge dissipation layer for e-beam lithography are also established.

AB - In this paper, the deep submicron complementary metal-oxide- semiconductor (CMOS) devices were fabricated. A conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography is used for direct writing the critical polysilicon gate level. Most of the specification of the designed CMOS parameters are met. The optimum conditions for submicron to 0.15 micrometers line/space of polysilicon gate using PAPSAH as charge dissipation layer for e-beam lithography are also established.

KW - Electron beam lithography

KW - Mix-and-match lithography

KW - Poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH)

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U2 - 10.1117/12.262831

DO - 10.1117/12.262831

M3 - Conference article

AN - SCOPUS:57949115138

SN - 0277-786X

VL - 2884

SP - 454

EP - 465

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 16th Annual BACUS Symposium on Photomask Technology and Management

Y2 - 18 September 1996 through 18 September 1996

ER -

Conducting poly(aniline-co-N-propanesulfonic acid aniline) (PAPSAH) as charge dissipation layer for e-beam lithography

Abstract

Keywords

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