Computational study on the performance comparison of monolayer and bilayer zigzag graphene nanoribbon FETs

Kai Tak Lam*, Gengchiau Liang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

In our ab initio study on the device performance of nitrogen-doped monolayer zigzag GNR (ZGNR) FETs, an increase in ZGNR width from 0.92 nm to 1.78 nm degrades the I max/I min ratio due to the decrease in the energy bandgap (E g) which causes the I min to increase. It is also observed that the presence of vacancy at the edges of the channel ribbon can also open up an E g in ZGNRs as nitrogen dopants, and the performance of such device depends greatly on the vacancy concentration. In addition, simulation was carried out on the nitrogen-doped bilayer ZGNR FET and comparing to the monolayer ZGNR FET, the bilayer device provides a larger current while the I max/I min is lowered.

Original languageEnglish
Title of host publicationProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs
StatePublished - 2009
Event2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China
Duration: 27 May 200929 May 2009

Publication series

NameProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Conference

Conference2009 13th International Workshop on Computational Electronics, IWCE 2009
Country/TerritoryChina
CityBeijing
Period27/05/0929/05/09

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