Computational study of graphene nanoribbon resonant tunneling diodes

Gengchiau Liang*, Hansen Teong, Kai Tak Lam

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The structural effects of different graphene nanoribbon resonant tunneling diodes (GNR-RTDs) are investigated under different temperatures. Although the W-shape structure outperforms the H-shape structure in term of the peak current, the peak-to-valley ratio of the H-shape is higher than the W-shape due to the smaller peak currents of the former. Furthermore, the effects of the channel length and the contact's bandgap of the W-shape GNR RTDs on device performance are studied and their detailed device physics is also provided in this work.

Original languageEnglish
Title of host publicationProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs
StatePublished - 2009
Event2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China
Duration: 27 May 200929 May 2009

Publication series

NameProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Conference

Conference2009 13th International Workshop on Computational Electronics, IWCE 2009
Country/TerritoryChina
CityBeijing
Period27/05/0929/05/09

Fingerprint

Dive into the research topics of 'Computational study of graphene nanoribbon resonant tunneling diodes'. Together they form a unique fingerprint.

Cite this