Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors

Wen Chia Wu; Terry Y.T. Hung; D. Mahaveer Sathaiya; Goutham Arutchelvan; Chen Feng Hsu; Sheng Kai Su; Ang Sheng Chou; Edward Chen; Yun Yang Shen; San Lin Liew; Vincent Hou; T. Y. Lee; Jin Cai; Chung Cheng Wu; Jeff Wu; H. S. Philip Wong; Chao Ching Cheng; Wen Hao Chang; Iuliana P. Radu; Chao Hsin Chien

doi:10.1109/TED.2023.3330461

Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors

Wen Chia Wu, Terry Y.T. Hung^*, D. Mahaveer Sathaiya, Goutham Arutchelvan, Chen Feng Hsu, Sheng Kai Su, Ang Sheng Chou, Edward Chen, Yun Yang Shen, San Lin Liew, Vincent Hou, T. Y. Lee, Jin Cai, Chung Cheng Wu, Jeff Wu, H. S. Philip Wong, Chao Ching Cheng, Wen Hao Chang, Iuliana P. Radu, Chao Hsin Chien

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The 2-D transition metal dichalcogenides (2-D TMDs) have emerged as a promising channel material for postsilicon applications for their ultrathin structure and excellent electrostatic control. However, achieving low contact resistance at scaled contact length remains a challenge. This article overcomes this challenge through optimized deposition of a semimetal/metal stack in monolayer MoS₂ channel transistors and obtains a low contact resistance of ∼300 Ω · μm at an extreme contact length of 12 nm at carrier concentration around 10¹³ cm^-2 (based on the best data from transmission line measurement extraction). Similar ON-currents are maintained across a range of contact lengths from 1000 to 12 nm. Our calibrated TCAD model also validates that the tunneling distance at the metal-CTMD interface exhibits a strongest positive correlation to the contact resistance. Doping in contact is then proposed and simulated as a potential solution for achieving a target corner of contact resistance and contact length defined by the International Roadmap for Devices and Systems (IRDS) for 2037.

Original language	English
Pages (from-to)	6680-6686
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	12
DOIs	https://doi.org/10.1109/TED.2023.3330461
State	Published - 1 Dec 2023

Keywords

Contact engineering
TCAD model
contact scaling
field effect transistor
monolayer transition metal dichalcogenide (TMD) material
semimetal contact

Access to Document

10.1109/TED.2023.3330461

Cite this

Wu, W. C., Hung, T. Y. T., Sathaiya, D. M., Arutchelvan, G., Hsu, C. F., Su, S. K., Chou, A. S., Chen, E., Shen, Y. Y., Liew, S. L., Hou, V., Lee, T. Y., Cai, J., Wu, C. C., Wu, J., Philip Wong, H. S., Cheng, C. C., Chang, W. H., Radu, I. P., & Chien, C. H. (2023). Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors. IEEE Transactions on Electron Devices, 70(12), 6680-6686. https://doi.org/10.1109/TED.2023.3330461

@article{f6788cc33f754252aeb43642ebe409fe,

title = "Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors",

abstract = "The 2-D transition metal dichalcogenides (2-D TMDs) have emerged as a promising channel material for postsilicon applications for their ultrathin structure and excellent electrostatic control. However, achieving low contact resistance at scaled contact length remains a challenge. This article overcomes this challenge through optimized deposition of a semimetal/metal stack in monolayer MoS2 channel transistors and obtains a low contact resistance of ∼300 Ω · μm at an extreme contact length of 12 nm at carrier concentration around 1013 cm-2 (based on the best data from transmission line measurement extraction). Similar ON-currents are maintained across a range of contact lengths from 1000 to 12 nm. Our calibrated TCAD model also validates that the tunneling distance at the metal-CTMD interface exhibits a strongest positive correlation to the contact resistance. Doping in contact is then proposed and simulated as a potential solution for achieving a target corner of contact resistance and contact length defined by the International Roadmap for Devices and Systems (IRDS) for 2037.",

keywords = "Contact engineering, TCAD model, contact scaling, field effect transistor, monolayer transition metal dichalcogenide (TMD) material, semimetal contact",

author = "Wu, {Wen Chia} and Hung, {Terry Y.T.} and Sathaiya, {D. Mahaveer} and Goutham Arutchelvan and Hsu, {Chen Feng} and Su, {Sheng Kai} and Chou, {Ang Sheng} and Edward Chen and Shen, {Yun Yang} and Liew, {San Lin} and Vincent Hou and Lee, {T. Y.} and Jin Cai and Wu, {Chung Cheng} and Jeff Wu and {Philip Wong}, {H. S.} and Cheng, {Chao Ching} and Chang, {Wen Hao} and Radu, {Iuliana P.} and Chien, {Chao Hsin}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",

year = "2023",

month = dec,

day = "1",

doi = "10.1109/TED.2023.3330461",

language = "English",

volume = "70",

pages = "6680--6686",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

Wu, WC, Hung, TYT, Sathaiya, DM, Arutchelvan, G, Hsu, CF, Su, SK, Chou, AS, Chen, E, Shen, YY, Liew, SL, Hou, V, Lee, TY, Cai, J, Wu, CC, Wu, J, Philip Wong, HS, Cheng, CC, Chang, WH, Radu, IP & Chien, CH 2023, 'Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors', IEEE Transactions on Electron Devices, vol. 70, no. 12, pp. 6680-6686. https://doi.org/10.1109/TED.2023.3330461

TY - JOUR

T1 - Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors

AU - Wu, Wen Chia

AU - Hung, Terry Y.T.

AU - Sathaiya, D. Mahaveer

AU - Arutchelvan, Goutham

AU - Hsu, Chen Feng

AU - Su, Sheng Kai

AU - Chou, Ang Sheng

AU - Chen, Edward

AU - Shen, Yun Yang

AU - Liew, San Lin

AU - Hou, Vincent

AU - Lee, T. Y.

AU - Cai, Jin

AU - Wu, Chung Cheng

AU - Wu, Jeff

AU - Philip Wong, H. S.

AU - Cheng, Chao Ching

AU - Chang, Wen Hao

AU - Radu, Iuliana P.

AU - Chien, Chao Hsin

PY - 2023/12/1

Y1 - 2023/12/1

N2 - The 2-D transition metal dichalcogenides (2-D TMDs) have emerged as a promising channel material for postsilicon applications for their ultrathin structure and excellent electrostatic control. However, achieving low contact resistance at scaled contact length remains a challenge. This article overcomes this challenge through optimized deposition of a semimetal/metal stack in monolayer MoS2 channel transistors and obtains a low contact resistance of ∼300 Ω · μm at an extreme contact length of 12 nm at carrier concentration around 1013 cm-2 (based on the best data from transmission line measurement extraction). Similar ON-currents are maintained across a range of contact lengths from 1000 to 12 nm. Our calibrated TCAD model also validates that the tunneling distance at the metal-CTMD interface exhibits a strongest positive correlation to the contact resistance. Doping in contact is then proposed and simulated as a potential solution for achieving a target corner of contact resistance and contact length defined by the International Roadmap for Devices and Systems (IRDS) for 2037.

AB - The 2-D transition metal dichalcogenides (2-D TMDs) have emerged as a promising channel material for postsilicon applications for their ultrathin structure and excellent electrostatic control. However, achieving low contact resistance at scaled contact length remains a challenge. This article overcomes this challenge through optimized deposition of a semimetal/metal stack in monolayer MoS2 channel transistors and obtains a low contact resistance of ∼300 Ω · μm at an extreme contact length of 12 nm at carrier concentration around 1013 cm-2 (based on the best data from transmission line measurement extraction). Similar ON-currents are maintained across a range of contact lengths from 1000 to 12 nm. Our calibrated TCAD model also validates that the tunneling distance at the metal-CTMD interface exhibits a strongest positive correlation to the contact resistance. Doping in contact is then proposed and simulated as a potential solution for achieving a target corner of contact resistance and contact length defined by the International Roadmap for Devices and Systems (IRDS) for 2037.

KW - Contact engineering

KW - TCAD model

KW - contact scaling

KW - field effect transistor

KW - monolayer transition metal dichalcogenide (TMD) material

KW - semimetal contact

UR - http://www.scopus.com/inward/record.url?scp=85177047408&partnerID=8YFLogxK

U2 - 10.1109/TED.2023.3330461

DO - 10.1109/TED.2023.3330461

M3 - Article

AN - SCOPUS:85177047408

SN - 0018-9383

VL - 70

SP - 6680

EP - 6686

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this