Comprehensive Physics Based TCAD Model for 2D MX2Channel Transistors

D. Mahaveer Sathaiya*, Terry Y.T. Hung, Edward Chen, Wen Chia Wu, Aslan Wei, Chih Piao Chuu, Sheng Kai Su, Ang Sheng Chou, Cheng Ting Chung, Chao Hsin Chien, Han Wang, Jin Cai, Chung Cheng Wu, Iuliana P. Radu, Jeff Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

For the first time, a comprehensive TCAD model is developed to unambiguously extract key device parameters: contact resistance (Rc), channel mobility (μCH), Schottky barrier height (SBH), & Dit from experimental data on back-gate (BG) transistors with MX2 channel. The model is tested and validated against three different data sets with different contact metal, quality of channel, contact, and interfaces. Using model's output, we analyze the accuracy of Rc and μCH extracted by the TLM method and provide guidance on the limits of its applicability. Finally, the model is used to project contact requirements (SBH 0eV, high doping density >2e13cm-2) for performant, scaled transistors with 2D material channel in stacked nanosheet configuration.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2841-2844
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

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