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Dive into the research topics of 'Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs'. Together they form a unique fingerprint.- Sort by
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S. Abhinay*, W. M. Wu, C. A. Shih, S. H. Chen, A. Sibaja-Hernandez, B. Parvais, U. Peralagu, A. Alian, T. L. Wu, M. D. Ker, G. Groeseneken, N. Collaert
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review