Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs

S. Abhinay*, W. M. Wu, C. A. Shih, S. H. Chen, A. Sibaja-Hernandez, B. Parvais, U. Peralagu, A. Alian, Tian-Li Wu, M. D. Ker, G. Groeseneken, N. Collaert

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The paper reports extensive experimental study and simulations to provide an in-depth understanding on the impact of different stress scenarios on ESD robustness of GaNRF HEMTs. These include different terminal combinations, bias configurations, and polarities of human body model (HBM) pulses. The different current discharge paths for each stress scenario play the most vital role in determining its HBM ESD robustness. Transient HBM I-V characteristics have been verified with TCAD simulations which illustrate the on-state gate Schottky diode at high HBM stress voltages contribute to high HBM robustness of the GaN RF HEMTs. The different stress scenarios result in 3 types of HBM failure mechanisms.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3071-3074
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

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