Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs

S. Abhinay; W. M. Wu; C. A. Shih; S. H. Chen; A. Sibaja-Hernandez; B. Parvais; U. Peralagu; A. Alian; Tian-Li Wu; M. D. Ker; G. Groeseneken; N. Collaert

doi:10.1109/IEDM45625.2022.10019357

Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs

S. Abhinay^*, W. M. Wu, C. A. Shih, S. H. Chen, A. Sibaja-Hernandez, B. Parvais, U. Peralagu, A. Alian, Tian-Li Wu, M. D. Ker, G. Groeseneken, N. Collaert

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The paper reports extensive experimental study and simulations to provide an in-depth understanding on the impact of different stress scenarios on ESD robustness of GaNRF HEMTs. These include different terminal combinations, bias configurations, and polarities of human body model (HBM) pulses. The different current discharge paths for each stress scenario play the most vital role in determining its HBM ESD robustness. Transient HBM I-V characteristics have been verified with TCAD simulations which illustrate the on-state gate Schottky diode at high HBM stress voltages contribute to high HBM robustness of the GaN RF HEMTs. The different stress scenarios result in 3 types of HBM failure mechanisms.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3071-3074
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019357
State	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 3 Dec 2022 → 7 Dec 2022

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	3/12/22 → 7/12/22

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10.1109/IEDM45625.2022.10019357

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Abhinay, S., Wu, W. M., Shih, C. A., Chen, S. H., Sibaja-Hernandez, A., Parvais, B., Peralagu, U., Alian, A., Wu, T.-L., Ker, M. D., Groeseneken, G., & Collaert, N. (2022). Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 3071-3074). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019357

@inproceedings{cf84877e59614341859bc7d8884f8df3,

title = "Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs",

abstract = "The paper reports extensive experimental study and simulations to provide an in-depth understanding on the impact of different stress scenarios on ESD robustness of GaNRF HEMTs. These include different terminal combinations, bias configurations, and polarities of human body model (HBM) pulses. The different current discharge paths for each stress scenario play the most vital role in determining its HBM ESD robustness. Transient HBM I-V characteristics have been verified with TCAD simulations which illustrate the on-state gate Schottky diode at high HBM stress voltages contribute to high HBM robustness of the GaN RF HEMTs. The different stress scenarios result in 3 types of HBM failure mechanisms.",

author = "S. Abhinay and Wu, {W. M.} and Shih, {C. A.} and Chen, {S. H.} and A. Sibaja-Hernandez and B. Parvais and U. Peralagu and A. Alian and Tian-Li Wu and Ker, {M. D.} and G. Groeseneken and N. Collaert",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019357",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3071--3074",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "美國",

}

Abhinay, S, Wu, WM, Shih, CA, Chen, SH, Sibaja-Hernandez, A, Parvais, B, Peralagu, U, Alian, A, Wu, T-L , Ker, MD, Groeseneken, G & Collaert, N 2022, Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 3071-3074, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019357

Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs. / Abhinay, S.; Wu, W. M.; Shih, C. A. et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 3071-3074 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs

AU - Abhinay, S.

AU - Wu, W. M.

AU - Shih, C. A.

AU - Chen, S. H.

AU - Sibaja-Hernandez, A.

AU - Parvais, B.

AU - Peralagu, U.

AU - Alian, A.

AU - Wu, Tian-Li

AU - Ker, M. D.

AU - Groeseneken, G.

AU - Collaert, N.

PY - 2022

Y1 - 2022

N2 - The paper reports extensive experimental study and simulations to provide an in-depth understanding on the impact of different stress scenarios on ESD robustness of GaNRF HEMTs. These include different terminal combinations, bias configurations, and polarities of human body model (HBM) pulses. The different current discharge paths for each stress scenario play the most vital role in determining its HBM ESD robustness. Transient HBM I-V characteristics have been verified with TCAD simulations which illustrate the on-state gate Schottky diode at high HBM stress voltages contribute to high HBM robustness of the GaN RF HEMTs. The different stress scenarios result in 3 types of HBM failure mechanisms.

AB - The paper reports extensive experimental study and simulations to provide an in-depth understanding on the impact of different stress scenarios on ESD robustness of GaNRF HEMTs. These include different terminal combinations, bias configurations, and polarities of human body model (HBM) pulses. The different current discharge paths for each stress scenario play the most vital role in determining its HBM ESD robustness. Transient HBM I-V characteristics have been verified with TCAD simulations which illustrate the on-state gate Schottky diode at high HBM stress voltages contribute to high HBM robustness of the GaN RF HEMTs. The different stress scenarios result in 3 types of HBM failure mechanisms.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 3071

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BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Electron Devices Meeting, IEDM 2022

Y2 - 3 December 2022 through 7 December 2022

ER -

Abhinay S, Wu WM, Shih CA, Chen SH, Sibaja-Hernandez A, Parvais B et al. Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 3071-3074. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019357

Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs

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