Comprehensive High-Voltage Parameter Extraction Strategy for BSIM-BULK HV Model

Garima Gill; Yogendra Machhiwar; Girish Pahwa; Chenming Hu; Harshit Agarwal

doi:10.1109/TED.2023.3257121

Comprehensive High-Voltage Parameter Extraction Strategy for BSIM-BULK HV Model

Garima Gill, Yogendra Machhiwar, Girish Pahwa, Chenming Hu, Harshit Agarwal

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this work, parameter extraction methodology for the BSIM industry standard high-voltage (HV) device compact model is presented. An extraction procedure covers entire range of operation, including weak inversion to strong inversion region, low and high drain biases, and multiple body biases with temperature effects. The extraction procedure is validated with experimental and numerical simulation data for several configurations of HV devices, including geometric variations.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	IEEE Transactions on Electron Devices
DOIs	https://doi.org/10.1109/TED.2023.3257121
State	Accepted/In press - 2023

Keywords

BSIM-BULK
Doping
Logic gates
Parameter extraction
parameter extraction
quasi-saturation
Resistance
semiconductor device modeling
Semiconductor device modeling
Semiconductor process modeling
velocity saturation
Voltage

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10.1109/TED.2023.3257121

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title = "Comprehensive High-Voltage Parameter Extraction Strategy for BSIM-BULK HV Model",

abstract = "In this work, parameter extraction methodology for the BSIM industry standard high-voltage (HV) device compact model is presented. An extraction procedure covers entire range of operation, including weak inversion to strong inversion region, low and high drain biases, and multiple body biases with temperature effects. The extraction procedure is validated with experimental and numerical simulation data for several configurations of HV devices, including geometric variations.",

keywords = "BSIM-BULK, Doping, Logic gates, Parameter extraction, parameter extraction, quasi-saturation, Resistance, semiconductor device modeling, Semiconductor device modeling, Semiconductor process modeling, velocity saturation, Voltage",

author = "Garima Gill and Yogendra Machhiwar and Girish Pahwa and Chenming Hu and Harshit Agarwal",

note = "Publisher Copyright: IEEE",

year = "2023",

doi = "10.1109/TED.2023.3257121",

language = "English",

pages = "1--7",

journal = "IEEE Transactions on Electron Devices",

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T1 - Comprehensive High-Voltage Parameter Extraction Strategy for BSIM-BULK HV Model

AU - Gill, Garima

AU - Machhiwar, Yogendra

AU - Pahwa, Girish

AU - Hu, Chenming

AU - Agarwal, Harshit

N1 - Publisher Copyright: IEEE

PY - 2023

Y1 - 2023

N2 - In this work, parameter extraction methodology for the BSIM industry standard high-voltage (HV) device compact model is presented. An extraction procedure covers entire range of operation, including weak inversion to strong inversion region, low and high drain biases, and multiple body biases with temperature effects. The extraction procedure is validated with experimental and numerical simulation data for several configurations of HV devices, including geometric variations.

AB - In this work, parameter extraction methodology for the BSIM industry standard high-voltage (HV) device compact model is presented. An extraction procedure covers entire range of operation, including weak inversion to strong inversion region, low and high drain biases, and multiple body biases with temperature effects. The extraction procedure is validated with experimental and numerical simulation data for several configurations of HV devices, including geometric variations.

KW - BSIM-BULK

KW - Doping

KW - Logic gates

KW - Parameter extraction

KW - parameter extraction

KW - quasi-saturation

KW - Resistance

KW - semiconductor device modeling

KW - Semiconductor device modeling

KW - Semiconductor process modeling

KW - velocity saturation

KW - Voltage

UR - http://www.scopus.com/inward/record.url?scp=85151559740&partnerID=8YFLogxK

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DO - 10.1109/TED.2023.3257121

M3 - Article

AN - SCOPUS:85151559740

SN - 0018-9383

SP - 1

EP - 7

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

Comprehensive High-Voltage Parameter Extraction Strategy for BSIM-BULK HV Model

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Keywords

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