Comprehensive examination of intrinsic-parameter-induced characteristic fluctuations in 16-nm-gate CMOS devices

Keyphrases

• Complementary Metal Oxide Semiconductor 100%
• Metal-oxide-semiconductor Devices 100%
• Intrinsic Parameters 100%
• Random Dopant Fluctuation 100%
• Process Variation Effect 100%
• Comprehensive Examination 100%
• Work Function Fluctuation 100%
• Characteristic Fluctuation 100%
• PMOSFET 50%
• Metal Gate 50%
• MOSFET 50%
• DC Characteristics 50%
• Cut-off Frequency 50%
• Device Characteristics 50%
• Gate Bias 50%
• Threshold Voltage 50%
• Atomistic Simulation 50%
• Gate Capacitance 50%
• AC-DC 50%
• Device Yield 50%
• Complementary Metal Oxide Semiconductor Field Effect Transistor 50%
• AC Characteristics 50%
• Intrinsic Fluctuations 50%
• Nanoscale Semiconductor Devices 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Intrinsic Parameter 100%
• Complementary Metal-Oxide-Semiconductor Device 100%
• Dopants 66%
• Process Variation 66%
• Metal Gate 33%
• Cutoff Frequency 33%
• Nanoscale 33%
• Gate Bias 33%
• Complementary Metal-Oxide-Semiconductor 33%
• Semiconductor Device 33%
• Gate Capacitance 33%
• Atomistic Simulation 33%
• Random Fluctuation 33%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Complementary Metal-Oxide-Semiconductor Device 100%
• Doping (Additives) 66%
• Capacitance 33%
• Semiconductor Device 33%