TY - GEN
T1 - Comprehensive examination of intrinsic-parameter-induced characteristic fluctuations in 16-nm-gate CMOS devices
AU - Han, Ming Hung
AU - Li, Yiming
AU - Lee, Kuo Fu
AU - Cheng, Hui Wen
AU - Su, Zhong Cheng
PY - 2010/6
Y1 - 2010/6
N2 - Intrinsic parameter fluctuations on device characteristic and yield are crucial in determining the operation of nanoscale semiconductor devices. In this paper, we examine the fluctuations of the threshold voltage (Vth), gate capacitance (Cg), and cutoff frequency (FT) of emerging metal/high-κ gate planar complementary metal-oxide-semiconductor (CMOS) field effect transistors (FETs) variability including metal-gate-workfunction fluctuation (WKF), random-dopant fluctuation (RDF), and process-variation effect (PVE). An experimentally validated 3D "atomistic" simulation allows us to investigate the effect of aforementioned fluctuation sources on device DC/AC property. The preliminary results show that RDF and WKF dominate the device DC characteristics for n-type MOSFET (NMOS) and p-type MOSFET (PMOS), respectively. PVE affects CMOS device AC characteristics, especially at high gate bias.
AB - Intrinsic parameter fluctuations on device characteristic and yield are crucial in determining the operation of nanoscale semiconductor devices. In this paper, we examine the fluctuations of the threshold voltage (Vth), gate capacitance (Cg), and cutoff frequency (FT) of emerging metal/high-κ gate planar complementary metal-oxide-semiconductor (CMOS) field effect transistors (FETs) variability including metal-gate-workfunction fluctuation (WKF), random-dopant fluctuation (RDF), and process-variation effect (PVE). An experimentally validated 3D "atomistic" simulation allows us to investigate the effect of aforementioned fluctuation sources on device DC/AC property. The preliminary results show that RDF and WKF dominate the device DC characteristics for n-type MOSFET (NMOS) and p-type MOSFET (PMOS), respectively. PVE affects CMOS device AC characteristics, especially at high gate bias.
KW - Characteristic fluctuation
KW - MOSFET
KW - Modeling and simulation
KW - Process-variation effect
KW - Random-dopant fluctuation
KW - Work-function fluctuation
UR - http://www.scopus.com/inward/record.url?scp=78049428510&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:78049428510
SN - 9781439834022
T3 - Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
SP - 21
EP - 24
BT - Nanotechnology 2010
T2 - Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Y2 - 21 June 2010 through 24 June 2010
ER -