Comprehensive analysis of short-channel effects in ultrathin SOI MOSFETs

Qian Xie, Chia Jung Lee, Jun Xu, Clement Wann, Jack Y.C. Sun, Yuan Taur

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59 Scopus citations

Abstract

This paper analyzes the 2-D short-channel effect in ultrathin SOI MOSFETs. An empirical, channel length-dependent scale length is extracted from the lateral field slope of a series of numerically simulated devices. We show how this scale length is related to the short-channel threshold voltage roll-off and minimum channel length with and without a substrate bias. The benefit of a reverse substrate bias is investigated and understood in terms of the field and distribution of inversion charge in the silicon film. In particular, how a bulk-like short-channel effect is achieved when an accumulation layer is formed at the back surface. Furthermore, the effect of a high-κ gate insulator is studied and scaling implications discussed.

Original languageEnglish
Article number6506100
Pages (from-to)1814-1819
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number6
DOIs
StatePublished - 2013

Keywords

  • High-κ gate dielectrics
  • reverse substrate bias
  • short-channel effects
  • ultrathin SOI MOSFETs

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