Composition of SiCN crystals consisting of a predominantly carbon-nitride network

D. M. Bhusari*, C. K. Chen, K. H. Chen, T. J. Chuang, L. C. Chen, Ming-Chang Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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We report here on the synthesis of large crystals of Si-containing carbon nitride, consisting of a predominantly C-N network, by microwave CVD. The Si content in this material varies from crystal to crystal and also with the deposition conditions and has been observed to be as low as less than 5 at. % in some crystals, wherein the Si atoms are believed to substitute for some of the C sites only. This is the first time that such large and well-faceted crystals consisting almost entirely of carbon-nitride network have been synthesized. Moreover, there is no obvious deposition of amorphous CN material.

Original languageEnglish
Pages (from-to)322-325
Number of pages4
JournalJournal of Materials Research
Issue number2
StatePublished - 1 Jan 1997


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