Complementary carbon nanotube-gated carbon nanotube thin-film transistor

Bae Horng Chen; Horng-Chih Lin; Tiao Yuan Huang; Jeng Hua Wei; Hung Hsiang Wang; Ming Jinn Tsai; Tien-Sheng Chao

doi:10.1063/1.2179612

Complementary carbon nanotube-gated carbon nanotube thin-film transistor

Bae Horng Chen, Horng-Chih Lin, Tiao Yuan Huang, Jeng Hua Wei, Hung Hsiang Wang, Ming Jinn Tsai, Tien-Sheng Chao^*

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We introduce, a complementary carbon nanotube (CNT)-gated CNT thin-film field effect transistor (FET). By using two perpendicularly crossed single-wall CNT (SWNT) bundles as the gate and the channel interchangeably, a sub- 50 nm complementary CNT-FET is demonstrated. It is found that the new CNT-FET shows acceptable FET characteristics by interchanging the roles of the gate and the channel. The unique dual functionality of the device will open up a new possibility and flexibility in the design of future complementary CNT electronic circuits.

Original language	English
Article number	093502
Journal	Applied Physics Letters
Volume	88
Issue number	9
DOIs	https://doi.org/10.1063/1.2179612
State	Published - 27 Feb 2006

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AU - Wang, Hung Hsiang

AU - Tsai, Ming Jinn

AU - Chao, Tien-Sheng

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Complementary carbon nanotube-gated carbon nanotube thin-film transistor

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