Comparsion between poly emitter bipolar characteristics with and without native oxide layers under various processes

Y. Niitsu; M. Norishima; G. Sasaki; H. Iwai; K. Maeguchi

doi:10.1109/BIPOL.1989.69467

Comparsion between poly emitter bipolar characteristics with and without native oxide layers under various processes

Y. Niitsu^*, M. Norishima, G. Sasaki, H. Iwai, K. Maeguchi

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The effect of the interfacial native oxide layer between polycrystalline and single-crystal Si was investigated in the submicron-rule bipolar and BiCMOS processes. It was found that the native oxide increases the current gain, but significantly degrades bipolar transistor performance. Bipolar transistors without the oxide layer, fabricated by different methods, were investigated. Without the layer, low emitter resistance and small current gain variation were achieved for a low-temperature process. The current gain reduction due to the lack of the oxide layer does not degrade the cutoff frequency. Improved performance for structures without native oxide was confirmed with ECL (emitter-coupled logic) ring oscillators.

Original language	English
Pages	98-101
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.1989.69467
State	Published - Sep 1989
Event	Proceedings of the 1989 Bipolar Circuits and Technology Meeting - Minneapolis, MN, USA Duration: 18 Sep 1989 → 19 Sep 1989

Conference

Conference	Proceedings of the 1989 Bipolar Circuits and Technology Meeting
City	Minneapolis, MN, USA
Period	18/09/89 → 19/09/89

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10.1109/BIPOL.1989.69467

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title = "Comparsion between poly emitter bipolar characteristics with and without native oxide layers under various processes",

abstract = "The effect of the interfacial native oxide layer between polycrystalline and single-crystal Si was investigated in the submicron-rule bipolar and BiCMOS processes. It was found that the native oxide increases the current gain, but significantly degrades bipolar transistor performance. Bipolar transistors without the oxide layer, fabricated by different methods, were investigated. Without the layer, low emitter resistance and small current gain variation were achieved for a low-temperature process. The current gain reduction due to the lack of the oxide layer does not degrade the cutoff frequency. Improved performance for structures without native oxide was confirmed with ECL (emitter-coupled logic) ring oscillators.",

author = "Y. Niitsu and M. Norishima and G. Sasaki and H. Iwai and K. Maeguchi",

year = "1989",

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doi = "10.1109/BIPOL.1989.69467",

language = "English",

pages = "98--101",

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T1 - Comparsion between poly emitter bipolar characteristics with and without native oxide layers under various processes

AU - Niitsu, Y.

AU - Norishima, M.

AU - Sasaki, G.

AU - Iwai, H.

AU - Maeguchi, K.

PY - 1989/9

Y1 - 1989/9

N2 - The effect of the interfacial native oxide layer between polycrystalline and single-crystal Si was investigated in the submicron-rule bipolar and BiCMOS processes. It was found that the native oxide increases the current gain, but significantly degrades bipolar transistor performance. Bipolar transistors without the oxide layer, fabricated by different methods, were investigated. Without the layer, low emitter resistance and small current gain variation were achieved for a low-temperature process. The current gain reduction due to the lack of the oxide layer does not degrade the cutoff frequency. Improved performance for structures without native oxide was confirmed with ECL (emitter-coupled logic) ring oscillators.

AB - The effect of the interfacial native oxide layer between polycrystalline and single-crystal Si was investigated in the submicron-rule bipolar and BiCMOS processes. It was found that the native oxide increases the current gain, but significantly degrades bipolar transistor performance. Bipolar transistors without the oxide layer, fabricated by different methods, were investigated. Without the layer, low emitter resistance and small current gain variation were achieved for a low-temperature process. The current gain reduction due to the lack of the oxide layer does not degrade the cutoff frequency. Improved performance for structures without native oxide was confirmed with ECL (emitter-coupled logic) ring oscillators.

UR - http://www.scopus.com/inward/record.url?scp=0024931975&partnerID=8YFLogxK

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DO - 10.1109/BIPOL.1989.69467

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EP - 101

Y2 - 18 September 1989 through 19 September 1989

ER -

Comparsion between poly emitter bipolar characteristics with and without native oxide layers under various processes

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