Comparison on mHEMT Q-band sub-harmonic mixers with/without delay compensation

Jin Siang Syu*, Chin-Chun Meng, Jen Yi Su, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Q-band sub-harmonic mixers (SHMs) with and without delay compensation are demonstrated in this paper using 0.15-μm metamorphic high electron mobility transistor (mHEMT) technology. A conventional stacked-LO sub-harmonic mixing cell consists of two Gilbert cells in cascode with quadrature LO inputs. The proposed compensation core in parallel with the stacked-LO core improves the port-to-port isolation. A Marchand balun is employed at the RF port to generate wideband differential signals. As a result, SHMs w/ and w/o compensation achieve the conversion gain of 1/0.5 dB and noise figure of 23/20 dB when 2f LO=39/42 GHz. However, the compensation circuit improves the 2LO-to-RF isolation by 12 dB, 2LO-to-IF isolation by 5 dB and RF-to-IF isolation by 5 dB without additional power consumption.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2010
Subtitle of host publicationConnecting the World, EuMIC 2010 - Conference Proceedings
Pages194-197
Number of pages4
StatePublished - Sep 2010
Event13th European Microwave Week 2010: Connecting the World, EuMIC 2010 - Paris, France
Duration: 26 Sep 20101 Oct 2010

Publication series

NameEuropean Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

Conference

Conference13th European Microwave Week 2010: Connecting the World, EuMIC 2010
Country/TerritoryFrance
CityParis
Period26/09/101/10/10

Keywords

  • Metamorphic high electron mobility transistor (mHEMT)
  • Q band
  • Sub-harmonic mixer (SHM)

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