Comparison of shunt-series shunt-shunt and shunt-series series-shunt dual feedback wideband amplifiers

Jin Siang Syu*, Tzung H. Wu, Chin-Chun Meng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The shunt-series shunt-shunt and shunt-series series-shunt dual feedback amplifiers are demonstrated in this paper using 2-μm GaInP/GaAs HBT technology. The shunt-series shunt-shunt and shunt-series series-shunt wideband amplifiers achieve a small-signal gain of 31/33 dB with the same 3-dB bandwidth of 6 GHz. The noise figure of both amplifiers is below 3 dB from dc to 10 GHz. In addition, shunt-series shunt-shunt wideband amplifiers without and with a common-drain (CD) configuration are demonstrated using 0.35-μm CMOS technology. As a result, the amplifier without/with a CD configuration achieves the power gain of 15/18 dB and noise figure of 9.5/10dB, respectively, at a supply voltage of 3.3 V.

Original languageEnglish
Title of host publication2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010
DOIs
StatePublished - 8 Jun 2010
Event2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010 - Melbourne, FL, United States
Duration: 12 Apr 201013 Apr 2010

Publication series

Name2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010

Conference

Conference2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010
Country/TerritoryUnited States
CityMelbourne, FL
Period12/04/1013/04/10

Keywords

  • CMOS
  • GaInP/GaAs heterojunction bipolar transistor (HBT)
  • Kukielka amplifier
  • Meyer amplifier
  • Wideband amplifier

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