@inproceedings{d3b2bc1a5faf42e0825aade8093c4c01,
title = "Comparison of shunt-series shunt-shunt and shunt-series series-shunt dual feedback wideband amplifiers",
abstract = "The shunt-series shunt-shunt and shunt-series series-shunt dual feedback amplifiers are demonstrated in this paper using 2-μm GaInP/GaAs HBT technology. The shunt-series shunt-shunt and shunt-series series-shunt wideband amplifiers achieve a small-signal gain of 31/33 dB with the same 3-dB bandwidth of 6 GHz. The noise figure of both amplifiers is below 3 dB from dc to 10 GHz. In addition, shunt-series shunt-shunt wideband amplifiers without and with a common-drain (CD) configuration are demonstrated using 0.35-μm CMOS technology. As a result, the amplifier without/with a CD configuration achieves the power gain of 15/18 dB and noise figure of 9.5/10dB, respectively, at a supply voltage of 3.3 V.",
keywords = "CMOS, GaInP/GaAs heterojunction bipolar transistor (HBT), Kukielka amplifier, Meyer amplifier, Wideband amplifier",
author = "Syu, {Jin Siang} and Wu, {Tzung H.} and Chin-Chun Meng",
year = "2010",
doi = "10.1109/WAMICON.2010.5461880",
language = "English",
isbn = "9781424466887",
series = "2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010",
booktitle = "2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010",
note = "2010 IEEE 11th Annual Wireless and Microwave Technology Conference, WAMICON 2010 ; Conference date: 12-04-2010 Through 13-04-2010",
}