@inproceedings{bea1b79af5224a6e9d52fdaeab1aa9cc,
title = "Comparison of performance and stability of tungsten-doped indium oxide thin film transistor with SiO, SiN and SiO/SiN as gate insulators",
abstract = "In this study, we investigated the performance and stability of thin-film transistors with tungsten-doped indium oxide as channel layer, which were deposited on SiO, SiN and SiO/SiN. Positive/Negative bias stress were performed to explore the electrical reliability of IWO TFT with different gate insulators.",
keywords = "Gate insulator, Thin-film transistors, Tungsten oxide",
author = "Chen, {Po Wen} and Chang, {Chih Hsiang} and Po-Tsun Liu",
year = "2015",
month = jan,
day = "1",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "674--675",
booktitle = "22nd International Display Workshops, IDW 2015",
note = "22nd International Display Workshops, IDW 2015 ; Conference date: 09-12-2015 Through 11-12-2015",
}
