Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs

C. T. Chan; C. H. Kuo; C. J. Tang; M. C. Chen; Ta-Hui Wang; S. Huang Lu; H. C. Hu; T. F. Chen; C. K. Yang; M. T. Lee; D. Y. Wu; J. K. Chen; S. C. Chien; S. W. Sun

doi:10.1109/IPFA.2004.1345537

Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs

C. T. Chan^*, C. H. Kuo, C. J. Tang, M. C. Chen, Ta-Hui Wang, S. Huang Lu, H. C. Hu, T. F. Chen, C. K. Yang, M. T. Lee, D. Y. Wu, J. K. Chen, S. C. Chien, S. W. Sun

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Accelerated oxide breakdown progression in ultra-thin oxide (1.4nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.

Original language	English
Pages	49-52
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2004.1345537
State	Published - 1 Dec 2004
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 5 Jul 2004 → 8 Jul 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan
Period	5/07/04 → 8/07/04

Keywords

Body potential
Breakdown progression
Carrier temperature
SOI pMOS

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10.1109/IPFA.2004.1345537

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Chan, C. T., Kuo, C. H., Tang, C. J., Chen, M. C., Wang, T.-H., Lu, S. H., Hu, H. C., Chen, T. F., Yang, C. K., Lee, M. T., Wu, D. Y., Chen, J. K., Chien, S. C., & Sun, S. W. (2004). Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs. 49-52. Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan. https://doi.org/10.1109/IPFA.2004.1345537

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title = "Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs",

abstract = "Accelerated oxide breakdown progression in ultra-thin oxide (1.4nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.",

keywords = "Body potential, Breakdown progression, Carrier temperature, SOI pMOS",

author = "Chan, {C. T.} and Kuo, {C. H.} and Tang, {C. J.} and Chen, {M. C.} and Ta-Hui Wang and Lu, {S. Huang} and Hu, {H. C.} and Chen, {T. F.} and Yang, {C. K.} and Lee, {M. T.} and Wu, {D. Y.} and Chen, {J. K.} and Chien, {S. C.} and Sun, {S. W.}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/IPFA.2004.1345537",

language = "English",

pages = "49--52",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Chan, CT, Kuo, CH, Tang, CJ, Chen, MC, Wang, T-H, Lu, SH, Hu, HC, Chen, TF, Yang, CK, Lee, MT, Wu, DY, Chen, JK, Chien, SC & Sun, SW 2004, 'Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs', Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan, 5/07/04 - 8/07/04 pp. 49-52. https://doi.org/10.1109/IPFA.2004.1345537

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T1 - Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs

AU - Chan, C. T.

AU - Kuo, C. H.

AU - Tang, C. J.

AU - Chen, M. C.

AU - Wang, Ta-Hui

AU - Lu, S. Huang

AU - Hu, H. C.

AU - Chen, T. F.

AU - Yang, C. K.

AU - Lee, M. T.

AU - Wu, D. Y.

AU - Chen, J. K.

AU - Chien, S. C.

AU - Sun, S. W.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Accelerated oxide breakdown progression in ultra-thin oxide (1.4nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.

AB - Accelerated oxide breakdown progression in ultra-thin oxide (1.4nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.

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KW - Breakdown progression

KW - Carrier temperature

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T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs

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Keywords

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