@inproceedings{f085ebfccb58439ba6f70b1284f5c46c,
title = "Comparison of high voltage, vertical geometry Ga2O3 rectifiers with GaN and SiC",
abstract = "Ga2O3 is a candidate for power electronics due to its large bandgap, controllable doping and availability of large diameter, inexpensive substrates. These include power conditioning systems, pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors and advanced power management and control electronics. There are cases where the performance exceeds the theoretical values for SiC. Existing Si, SiC (vertical devices), and heteroepitaxial GaN (lateral devices) enjoy advantages in terms of process maturity, especially for Si, where devices such as superjunctions which surpass the unipolar {"}limit{"}. Continued development of low defect substrates, optimized epi growth and device design and processing methods for Ga2O3 are required to push the experimental results closer to their theoretical values. The actual experimental value of Vb is well below the theoretical predictions. Thermal management is a key issue in Ga2O3 devices and initial studies have appeared on both the experimental and theoretical fronts.",
author = "Yang, {J. C.} and Chaker Fares and Carey, {P. H.} and Minghan Man and Fan Ren and Marko Tadjer and Chen, {Y. T.} and Liao, {Yu Te} and Chang, {Chin Wei} and Jenshan Lin and Ribhu Sharma and Law, {Mark E.} and Raad, {Peter E.} and Komarov, {Pavel L.} and Smith, {David J.} and Akito Kuramata and Pearton, {S. J.}",
year = "2019",
month = jan,
day = "1",
doi = "10.1149/09207.0015ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "15--24",
editor = "M. Dudley and B. Raghothamachar and N. Ohtani and M. Bakowski and K. Shenai",
booktitle = "Gallium Nitride and Silicon Carbide Power Technologies 9",
edition = "7",
note = "Symposium on Gallium Nitride and Silicon Carbide Power Technologies 9 - 236th ECS Meeting ; Conference date: 13-10-2019 Through 17-10-2019",
}