Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS2

Chi Feng Li; Yun Yan Chung; Chao Ting Lin; Yen Teng Ho; Chao Hsin Chien

doi:10.1109/EDTM.2019.8731069

Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS₂

Chi Feng Li, Yun Yan Chung, Chao Ting Lin, Yen Teng Ho, Chao Hsin Chien

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, we adopted two kinds of TLM structures to extract the top (vertical) and the edge (horizontal) contact resistances of Metal/MoS₂ directly from experimental results. Novel two-step sulfurization scheme was conducted for forming Nb-doped MoS₂ films on the sapphire substrate. We found the edge contact resistivity (ρ_C-edge) was almost 2 orders of magnitude lower than (ρ_C-top). Our approach seems to be a reliable and simple way to precisely determine the edge and top contact resistances of the Metal/2D contact.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	191-193
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731069
State	Published - Mar 2019
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 12 Mar 2019 → 15 Mar 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	12/03/19 → 15/03/19

Keywords

2-step sulfurization
edge contact resistivity
Metal/2D
MoS
Nb-doped
TLM
TMD

Access to Document

10.1109/EDTM.2019.8731069

Cite this

Li, C. F., Chung, Y. Y., Lin, C. T., Ho, Y. T., & Chien, C. H. (2019). Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS₂. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 191-193). [8731069] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731069

Li, Chi Feng ; Chung, Yun Yan ; Lin, Chao Ting et al. / Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS₂. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 191-193 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

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title = "Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS2",

abstract = "In this work, we adopted two kinds of TLM structures to extract the top (vertical) and the edge (horizontal) contact resistances of Metal/MoS2 directly from experimental results. Novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on the sapphire substrate. We found the edge contact resistivity (ρC-edge) was almost 2 orders of magnitude lower than (ρC-top). Our approach seems to be a reliable and simple way to precisely determine the edge and top contact resistances of the Metal/2D contact.",

keywords = "2-step sulfurization, edge contact resistivity, Metal/2D, MoS, Nb-doped, TLM, TMD",

author = "Li, {Chi Feng} and Chung, {Yun Yan} and Lin, {Chao Ting} and Ho, {Yen Teng} and Chien, {Chao Hsin}",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731069",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "191--193",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

address = "United States",

note = "null ; Conference date: 12-03-2019 Through 15-03-2019",

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Li, CF, Chung, YY, Lin, CT, Ho, YT & Chien, CH 2019, Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS₂. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731069, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 191-193, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 12/03/19. https://doi.org/10.1109/EDTM.2019.8731069

Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS₂. / Li, Chi Feng; Chung, Yun Yan; Lin, Chao Ting et al.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 191-193 8731069 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this work, we adopted two kinds of TLM structures to extract the top (vertical) and the edge (horizontal) contact resistances of Metal/MoS2 directly from experimental results. Novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on the sapphire substrate. We found the edge contact resistivity (ρC-edge) was almost 2 orders of magnitude lower than (ρC-top). Our approach seems to be a reliable and simple way to precisely determine the edge and top contact resistances of the Metal/2D contact.

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Li CF, Chung YY, Lin CT, Ho YT, Chien CH. Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS₂. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 191-193. 8731069. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731069