Comparison of 2-D MoS2and Si Ferroelectric FET Nonvolatile Memories Considering the Trapped-Charge-Induced Variability

You Sheng Liu, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This brief investigates scaled 2-D MoS2 ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) considering the trapped-charge-induced variability with the aid of Technology Computer Aided Design (TCAD) atomistic simulations. Our study indicates that, compared with the Si channel, the monolayer MoS2 channel with larger electron affinity and bandgap energy can result in an FeFET NVM with larger memory window (MW). Moreover, due to its lower channel permittivity and channel thickness, the 2-D MoS2 FeFET possesses a superior immunity to trapped-charge-induced variability, and the gap in MW between MoS2 and Si FeFETs enlarges under the presence of trapped charges. Besides, due to its atomically thin channel thickness and superior electrostatic integrity, the scaled 2-D MoS2 FeFET possesses a remarkably better read margin than the Si counterpart. Our study may provide insights for future scaling of FeFET NVMs.

Original languageEnglish
Pages (from-to)2738-2740
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume69
Issue number5
DOIs
StatePublished - 1 May 2022

Keywords

  • 2-D material
  • Ferroelectric field-effect transistor (FeFET)
  • Memory window (MW)
  • Nonvolatile memory (NVM)
  • Random variation

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