Abstract
The large area TFT image sensors using PIN photodiode as the light sensing device attract attention owing to their application in optical fingerprint sensors under displays. Different structures of the pixel sensing circuits are compared in the aspect of output signal, settling time, photo current collection, as well as variation of TFT. Even though the active pixel sensing circuits (APS) are expected to provide better performance intuitively, the passive pixel sensing circuits (PPS) can surpass APS for practical purpose.
| Original language | English |
|---|---|
| Pages (from-to) | 253-256 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 52 |
| Issue number | S1 |
| DOIs | |
| State | Published - Feb 2021 |
| Event | International Conference on Display Technology, ICDT 2020 - Wuhan, China Duration: 18 Oct 2020 → 21 Oct 2020 |
Keywords
- Author Thin-film transistor (TFT)
- Current-type active pixel sensing circuit (C-APS)
- Passive pixel sensing circuit (PPS)
- Voltage-type active pixel sensing circuit (V-APS)