Comparison between c-cut and a-cut Nd:YVO4 lasers passively Q-switched with a Cr4+:YAG saturable absorber

Yung-Fu Chen; Yu-Pin Lan

doi:10.1007/s003400200814

Comparison between c-cut and a-cut Nd:YVO₄ lasers passively Q-switched with a Cr⁴⁺:YAG saturable absorber

Yung-Fu Chen^*, Yu-Pin Lan

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

112 Scopus citations

Abstract

Comparison between c-cut and a-cut Nd:YVO₄ microchip lasers passively Q-switched with a Cr⁴⁺:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO₄ crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO₄ crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (> 10 kW) lasers.

Original language	English
Pages (from-to)	415-418
Number of pages	4
Journal	Applied Physics B: Lasers and Optics
Volume	74
Issue number	4-5
DOIs	https://doi.org/10.1007/s003400200814
State	Published - Apr 2002

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abstract = "Comparison between c-cut and a-cut Nd:YVO4 microchip lasers passively Q-switched with a Cr4+:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO4 crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO4 crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (> 10 kW) lasers.",

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N2 - Comparison between c-cut and a-cut Nd:YVO4 microchip lasers passively Q-switched with a Cr4+:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO4 crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO4 crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (> 10 kW) lasers.

AB - Comparison between c-cut and a-cut Nd:YVO4 microchip lasers passively Q-switched with a Cr4+:YAG saturable absorber is experimentally made. The lower emission cross section of the c-cut Nd:YVO4 crystal can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystal. The experimental result further reveals that a c-cut Nd:YVO4 crystal is a very convenient material for short-pulse (sub-nanosecond) and high-peak-power (> 10 kW) lasers.

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Comparison between c-cut and a-cut Nd:YVO₄ lasers passively Q-switched with a Cr⁴⁺:YAG saturable absorber

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