Comparing RTA and laser SPE LPE annealing of Ge-epi with Si, Sn C implantation for well mobility/strain engineering

John Borland, Shang Shuin Chaung, Tseung Yuen Tseng, Abhijeet Joshi, Bulent Basol, Yao Jen Lee, Takashi Kuroi, Gary Goodman, Nadya Khapochkina, Temel Buyuklimanli

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

For undoped <1E14/cm3 Silicon-Cz wafers, hole mobility (μ h ) is reported to be 480cm2/Vs while electron mobility (μ e ) is 3.5x higher at 1500cm 2/Vs and in Germanium-Cz wafers μ h is 4x higher at 2000cm2/Vs and μ e is 3.5x higher at 4800cm 2/Vs as shown in Fig. 1 [1]. When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm3, the mobility decreases in Si to μ h =150cm2/Vs and μ e =300cm2/Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to μ h =400cm2/Vs and μ e =1000cm 2/Vs a decrease of 80% for both but compared to Si, an increase in μ h by 2.7x and μ e by 3.3x.

Original languageEnglish
Title of host publication19th International Workshop on Junction Technology, IWJT 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784863487277
DOIs
StatePublished - Jun 2019
Event19th International Workshop on Junction Technology, IWJT 2019 - Kyoto, Japan
Duration: 6 Jun 20197 Jun 2019

Publication series

Name19th International Workshop on Junction Technology, IWJT 2019

Conference

Conference19th International Workshop on Junction Technology, IWJT 2019
Country/TerritoryJapan
CityKyoto
Period6/06/197/06/19

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