Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering

John Borland; Shang Shuin Chaung; Tseung-Yuen Tseng; Abhijeet Joshi; Bulent Basol; Yao Jen Lee; Takashi Kuroi; Gary Goodman; Nadya Khapochkina; Temel Buyuklimanli

doi:10.23919/IWJT.2019.8802624

Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering

John Borland, Shang Shuin Chaung, Tseung-Yuen Tseng, Abhijeet Joshi, Bulent Basol, Yao Jen Lee, Takashi Kuroi, Gary Goodman, Nadya Khapochkina, Temel Buyuklimanli

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

For undoped <1E14/cm³ Silicon-Cz wafers, hole mobility (μ h ) is reported to be 480cm²/Vs while electron mobility (μ e ) is 3.5x higher at 1500cm 2/Vs and in Germanium-Cz wafers μ h is 4x higher at 2000cm²/Vs and μ e is 3.5x higher at 4800cm 2/Vs as shown in Fig. 1 [1]. When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm³, the mobility decreases in Si to μ h =150cm²/Vs and μ e =300cm²/Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to μ h =400cm²/Vs and μ e =1000cm 2/Vs a decrease of 80% for both but compared to Si, an increase in μ h by 2.7x and μ e by 3.3x.

Original language	English
Title of host publication	19th International Workshop on Junction Technology, IWJT 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	4
ISBN (Electronic)	978-4-86348-727-7
ISBN (Print)	978-1-7281-3005-7
DOIs	https://doi.org/10.23919/IWJT.2019.8802624
State	Published - 6 Jun 2019
Event	19th International Workshop on Junction Technology, IWJT 2019 - Kyoto, Japan Duration: 6 Jun 2019 → 7 Jun 2019

Publication series

Name	19th International Workshop on Junction Technology, IWJT 2019

Conference

Conference	19th International Workshop on Junction Technology, IWJT 2019
Country/Territory	Japan
City	Kyoto
Period	6/06/19 → 7/06/19

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10.23919/IWJT.2019.8802624

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Borland, J., Chaung, S. S., Tseng, T-Y., Joshi, A., Basol, B., Lee, Y. J., Kuroi, T., Goodman, G., Khapochkina, N., & Buyuklimanli, T. (2019). Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering. In 19th International Workshop on Junction Technology, IWJT 2019 [8802624] (19th International Workshop on Junction Technology, IWJT 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2019.8802624

Borland, John ; Chaung, Shang Shuin ; Tseng, Tseung-Yuen et al. / Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering. 19th International Workshop on Junction Technology, IWJT 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (19th International Workshop on Junction Technology, IWJT 2019).

@inproceedings{43545cf81cb44c75ac7b960873624ddf,

title = "Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering",

abstract = "For undoped <1E14/cm3 Silicon-Cz wafers, hole mobility (μ h ) is reported to be 480cm2/Vs while electron mobility (μ e ) is 3.5x higher at 1500cm 2/Vs and in Germanium-Cz wafers μ h is 4x higher at 2000cm2/Vs and μ e is 3.5x higher at 4800cm 2/Vs as shown in Fig. 1 [1]. When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm3, the mobility decreases in Si to μ h =150cm2/Vs and μ e =300cm2/Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to μ h =400cm2/Vs and μ e =1000cm 2/Vs a decrease of 80% for both but compared to Si, an increase in μ h by 2.7x and μ e by 3.3x.",

author = "John Borland and Chaung, {Shang Shuin} and Tseung-Yuen Tseng and Abhijeet Joshi and Bulent Basol and Lee, {Yao Jen} and Takashi Kuroi and Gary Goodman and Nadya Khapochkina and Temel Buyuklimanli",

year = "2019",

month = jun,

day = "6",

doi = "10.23919/IWJT.2019.8802624",

language = "English",

isbn = "978-1-7281-3005-7",

series = "19th International Workshop on Junction Technology, IWJT 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "19th International Workshop on Junction Technology, IWJT 2019",

address = "United States",

note = "null ; Conference date: 06-06-2019 Through 07-06-2019",

}

Borland, J, Chaung, SS, Tseng, T-Y, Joshi, A, Basol, B, Lee, YJ, Kuroi, T, Goodman, G, Khapochkina, N & Buyuklimanli, T 2019, Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering. in 19th International Workshop on Junction Technology, IWJT 2019., 8802624, 19th International Workshop on Junction Technology, IWJT 2019, Institute of Electrical and Electronics Engineers Inc., 19th International Workshop on Junction Technology, IWJT 2019, Kyoto, Japan, 6/06/19. https://doi.org/10.23919/IWJT.2019.8802624

Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering. / Borland, John; Chaung, Shang Shuin; Tseng, Tseung-Yuen et al.

19th International Workshop on Junction Technology, IWJT 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8802624 (19th International Workshop on Junction Technology, IWJT 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering

AU - Borland, John

AU - Chaung, Shang Shuin

AU - Tseng, Tseung-Yuen

AU - Joshi, Abhijeet

AU - Basol, Bulent

AU - Lee, Yao Jen

AU - Kuroi, Takashi

AU - Goodman, Gary

AU - Khapochkina, Nadya

AU - Buyuklimanli, Temel

PY - 2019/6/6

Y1 - 2019/6/6

N2 - For undoped <1E14/cm3 Silicon-Cz wafers, hole mobility (μ h ) is reported to be 480cm2/Vs while electron mobility (μ e ) is 3.5x higher at 1500cm 2/Vs and in Germanium-Cz wafers μ h is 4x higher at 2000cm2/Vs and μ e is 3.5x higher at 4800cm 2/Vs as shown in Fig. 1 [1]. When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm3, the mobility decreases in Si to μ h =150cm2/Vs and μ e =300cm2/Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to μ h =400cm2/Vs and μ e =1000cm 2/Vs a decrease of 80% for both but compared to Si, an increase in μ h by 2.7x and μ e by 3.3x.

AB - For undoped <1E14/cm3 Silicon-Cz wafers, hole mobility (μ h ) is reported to be 480cm2/Vs while electron mobility (μ e ) is 3.5x higher at 1500cm 2/Vs and in Germanium-Cz wafers μ h is 4x higher at 2000cm2/Vs and μ e is 3.5x higher at 4800cm 2/Vs as shown in Fig. 1 [1]. When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm3, the mobility decreases in Si to μ h =150cm2/Vs and μ e =300cm2/Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to μ h =400cm2/Vs and μ e =1000cm 2/Vs a decrease of 80% for both but compared to Si, an increase in μ h by 2.7x and μ e by 3.3x.

UR - http://www.scopus.com/inward/record.url?scp=85072083408&partnerID=8YFLogxK

U2 - 10.23919/IWJT.2019.8802624

DO - 10.23919/IWJT.2019.8802624

M3 - Conference contribution

AN - SCOPUS:85072083408

SN - 978-1-7281-3005-7

T3 - 19th International Workshop on Junction Technology, IWJT 2019

BT - 19th International Workshop on Junction Technology, IWJT 2019

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 6 June 2019 through 7 June 2019

ER -

Borland J, Chaung SS, Tseng T-Y, Joshi A, Basol B, Lee YJ et al. Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering. In 19th International Workshop on Junction Technology, IWJT 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8802624. (19th International Workshop on Junction Technology, IWJT 2019). doi: 10.23919/IWJT.2019.8802624

Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering

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