Compact W-band SPQT MMIC switch using traveling wave concept

Shih Fong Chao*, Zuo-Min Tsai , Kun You Lin, Huei Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

A high performance W-band single-pole-quadruple-throw (SPQT) switch with a compact chip size using GaAs HEMT is demonstrated. This SPQT switch has a measured insertion loss of 3.9-5.5 dB and isolation higher than 30 dB from 70 to 102 GHz. A minimum insertion loss of 3.9 dB with isolation higher than 30 dB was measured at 90 GHz.

Original languageEnglish
Title of host publicationGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Pages357-360
Number of pages4
StatePublished - 1 Dec 2005
EventGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
Duration: 3 Oct 20054 Oct 2005

Publication series

NameGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Volume2005

Conference

ConferenceGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Country/TerritoryFrance
CityParis
Period3/10/054/10/05

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