@inproceedings{8bc3ecd68c3b4d2bb0b2ef5d6df3c1e2,
title = "Compact models of negative-capacitance FinFETs: Lumped and distributed charge models",
abstract = "This work presents insights into the device physics and behaviors of ferroelectric based negative capacitance FinFETs (NC-FinFETs) by proposing lumped and distributed compact models for its simulation. NC-FinFET may have a floating metal between ferroelectric (FE) and the dielectric layers and the lumped charge model represents such a device. For a NC-FinFET without a floating metal, the distributed charge model should be used and at each point in the channel the ferroelectric layer will impact the local channel charge. This distributed effect has important implications on device characteristics as shown in this paper. The proposed compact models have been implemented in circuit simulators for exploring circuits based on NC-FinFET technology.",
author = "Duarte, {Juan P.} and Sourabh Khandelwal and Khan, {Asif I.} and Angada Sachid and Lin, {Yen Kai} and Chang, {Huan Lin} and Sayeef Salahuddin and Chen-Ming Hu",
year = "2017",
month = jan,
day = "31",
doi = "10.1109/IEDM.2016.7838514",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "30.5.1--30.5.4",
booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
address = "United States",
note = "62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
}