Compact Modeling of Impact Ionization in High-Voltage Devices

Garima Gill*, Anant Singhal, Girish Pahwa, Chenming Hu, Harshit Agarwal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


In this article, we discuss a novel compact model to capture the double-hump characteristic in the substrate current versus gate voltage plot of a high-voltage device. An analytical expression for the electric field is derived by solving Poisson's equation at the drift-drain junction of the device, which is then incorporated in the final substrate current equation. The model is implemented in the Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK) HV compact model and validated with numerical TCAD simulations and different experimental datasets.

Original languageEnglish
Pages (from-to)2389-2394
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number5
StatePublished - 1 May 2023


  • Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK)
  • high-voltage MOS (HVMOS)
  • impact ionization
  • substrate current


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