Compact Modeling of Impact Ionization in High-Voltage Devices

Garima Gill; Anant Singhal; Girish Pahwa; Chenming Hu; Harshit Agarwal

doi:10.1109/TED.2023.3253101

Compact Modeling of Impact Ionization in High-Voltage Devices

Garima Gill^*, Anant Singhal, Girish Pahwa, Chenming Hu, Harshit Agarwal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this article, we discuss a novel compact model to capture the double-hump characteristic in the substrate current versus gate voltage plot of a high-voltage device. An analytical expression for the electric field is derived by solving Poisson's equation at the drift-drain junction of the device, which is then incorporated in the final substrate current equation. The model is implemented in the Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK) HV compact model and validated with numerical TCAD simulations and different experimental datasets.

Original language	English
Pages (from-to)	2389-2394
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	5
DOIs	https://doi.org/10.1109/TED.2023.3253101
State	Published - 1 May 2023

Keywords

Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK)
high-voltage MOS (HVMOS)
impact ionization
substrate current

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10.1109/TED.2023.3253101

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title = "Compact Modeling of Impact Ionization in High-Voltage Devices",

abstract = "In this article, we discuss a novel compact model to capture the double-hump characteristic in the substrate current versus gate voltage plot of a high-voltage device. An analytical expression for the electric field is derived by solving Poisson's equation at the drift-drain junction of the device, which is then incorporated in the final substrate current equation. The model is implemented in the Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK) HV compact model and validated with numerical TCAD simulations and different experimental datasets.",

keywords = "Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK), high-voltage MOS (HVMOS), impact ionization, substrate current",

author = "Garima Gill and Anant Singhal and Girish Pahwa and Chenming Hu and Harshit Agarwal",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2023",

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doi = "10.1109/TED.2023.3253101",

language = "English",

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journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - Compact Modeling of Impact Ionization in High-Voltage Devices

AU - Gill, Garima

AU - Singhal, Anant

AU - Pahwa, Girish

AU - Hu, Chenming

AU - Agarwal, Harshit

PY - 2023/5/1

Y1 - 2023/5/1

N2 - In this article, we discuss a novel compact model to capture the double-hump characteristic in the substrate current versus gate voltage plot of a high-voltage device. An analytical expression for the electric field is derived by solving Poisson's equation at the drift-drain junction of the device, which is then incorporated in the final substrate current equation. The model is implemented in the Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK) HV compact model and validated with numerical TCAD simulations and different experimental datasets.

AB - In this article, we discuss a novel compact model to capture the double-hump characteristic in the substrate current versus gate voltage plot of a high-voltage device. An analytical expression for the electric field is derived by solving Poisson's equation at the drift-drain junction of the device, which is then incorporated in the final substrate current equation. The model is implemented in the Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK) HV compact model and validated with numerical TCAD simulations and different experimental datasets.

KW - Berkeley Short-channel IGFET Model-Bulk (BSIM-BULK)

KW - high-voltage MOS (HVMOS)

KW - impact ionization

KW - substrate current

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U2 - 10.1109/TED.2023.3253101

DO - 10.1109/TED.2023.3253101

M3 - Article

AN - SCOPUS:85151499376

SN - 0018-9383

VL - 70

SP - 2389

EP - 2394

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Compact Modeling of Impact Ionization in High-Voltage Devices

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