Compact Modeling of Emerging IC Devices for Technology-Design Co-development

G. Pahwa*, A. Dasgupta, C. T. Tung, M. Y. Kao, C. K. Dabhi, S. Sarker, S. Salahuddin, C. Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

This paper presents compact models of GAA, MRAM, ferroelectric logic, and memory devices, as well as cryogenic CMOS that supports quantum computing. These compact models achieve microseconds fast simulation of the charge and current of devices using analytical functions as solutions to complex device physics problems aided by adjustable parameters. Though not as predictive as TCAD, each model can simulate the characteristics and manufacturing variabilities of the device as accurately and much faster. Early availability of compact models of emerging devices is a necessity for technology-design co-development using these devices.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages811-814
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

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