Compact modeling for RF and microwave integrated circuits

A. M. Niknejad*, M. Chan, Chen-Ming Hu, B. Brodersen, X. Xi, J. He, S. Emami, C. Doan, Y. Cao, Pin Su, H. Wan, M. Dunga, C. H. Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Compact modeling has been an integral part of the design of integrated circuits for digital and analog applications. The availability of scalable CMOS device models has enabled rapid simulation and design of present and future device technologies. Increasingly RF and microwave circuits designed with CMOS and SiGe technologies obviate the need for compact modeling in this domain. In this paper we will summarize the unique requirements of high-frequency compact modeling efforts by focusing on key components, such as passive devices, interconnect, substrate coupling, and active devices.

Original languageEnglish
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages294-297
Number of pages4
StatePublished - Feb 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: 23 Feb 200327 Feb 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Conference

Conference2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Country/TerritoryUnited States
CitySan Francisco, CA
Period23/02/0327/02/03

Keywords

  • Interconnect modeling
  • Passive device modeling
  • RF and microwave compact modeling
  • Substrate coupling

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