Abstract
Fully transparent and stable resistive switching characteristics in resistive random access memory (RRAM) device consisting of ITO/Ga doped ZnO (GZO)/ZnO/ITO architecture are proposed. The GZO nanorods with well aligned and extremely dense properties are considered as a thin film for RRAM device. The oxygen vacancies can be confined and migrate along grain boundaries in the GZO nanorod film. Therefore, the weakest point for formation and rupture of conductive filament can be limited at the interface between GZO nanorod film and ZnO seeding layer. Compared with ITO/ZnO/ITO device, a significant improvement in the distribution of high resistance state (HRS) and low resistance state (LRS) during resistance switching is demonstrated in the present device. In addition, a high endurance of more than 7000 cycles with the resistance ratios of HRS/LRS about 200 times is achieved in this device. The ITO/GZO/ZnO/ITO device is a good candidate for the transparent RRAM application.
| Original language | English |
|---|---|
| Article number | 6875903 |
| Pages (from-to) | 3435-3441 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 61 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1 Oct 2014 |
Keywords
- Endurance
- Ga doped
- ZnO
- grain boundary
- nanorod
- orientation
- resistive random access memory (RRAM)
- resistive switching (RS)
- transparent