Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'

Juhn-Jong Lin; Chih Yuan Wu

doi:10.1088/0957-4484/20/46/468001

Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'

Juhn-Jong Lin^*, Chih Yuan Wu

^*Corresponding author for this work

Institute of Physics

Research output: Contribution to journal › Comment/debate

Abstract

We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.

Original language	English
Article number	468001
Number of pages	1
Journal	Nanotechnology
Volume	20
Issue number	46
DOIs	https://doi.org/10.1088/0957-4484/20/46/468001
State	Published - 9 Nov 2009

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title = "Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'",

abstract = "We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.",

author = "Juhn-Jong Lin and Wu, {Chih Yuan}",

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Y1 - 2009/11/9

N2 - We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.

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Comment on 'Electron-phonon scattering in Sn-doped In2O 3 FET nanowires probed by temperature-dependent measurements'

Abstract

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