Combined effects of nitrogen implantation at S/D extension and N₂O oxide on 0.18 μm N- and P-metal oxide field effect transistors (MOSFETs)

The combined effects of N₂-implantation at S/D extension and N₂O oxide on 0.18 μm n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V_th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N₂O oxide or N₂-implantation. However, for p-channel transistors, opposite trends are observed for N₂O oxide and N₂-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N₂O oxide and N₂-implantation.