In this paper, we report the combination effects of nitrogen implantation at S/D extension and N 2 O gate oxide on 0.18 μm n- and p-MOSFETs. It is found that Vt-roll-off is enhanced by nitrogen incorporation which also results in large DIBL in deep submicron device. On the other hand, improvement is found for nitrogen incorporation in terms of junction leakage, reliability, and interfacial quality for nMOSFET. Improvement of Q bd , C inv /C ox and reliability are observed for pMOSFETs.
|Number of pages||5|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China|
Duration: 3 Jun 1997 → 5 Jun 1997
|Conference||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications|
|Period||3/06/97 → 5/06/97|