Combination effects of nitrogen implantation at S/D extension and N 2 O oxide on 0.18 μm n- and p-MOSFETs

Tien-Sheng Chao; Chao-Hsin Chien; S. K. Chiao; Horng-Chih Lin; M. C. Liaw; L. P. Chen; T. Y. Huang; T. F. Lei; C. Y. Chang

Combination effects of nitrogen implantation at S/D extension and N ₂ O oxide on 0.18 μm n- and p-MOSFETs

Tien-Sheng Chao^*, Chao-Hsin Chien, S. K. Chiao, Horng-Chih Lin, M. C. Liaw, L. P. Chen, T. Y. Huang, T. F. Lei, C. Y. Chang

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

In this paper, we report the combination effects of nitrogen implantation at S/D extension and N₂O gate oxide on 0.18 μm n- and p-MOSFETs. It is found that Vt-roll-off is enhanced by nitrogen incorporation which also results in large DIBL in deep submicron device. On the other hand, improvement is found for nitrogen incorporation in terms of junction leakage, reliability, and interfacial quality for nMOSFET. Improvement of Q_bd, C_inv/C_ox and reliability are observed for pMOSFETs.

Original language	English
Pages	316-320
Number of pages	5
State	Published - 1997
Event	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China Duration: 3 Jun 1997 → 5 Jun 1997

Conference

Conference	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
City	Taipei, China
Period	3/06/97 → 5/06/97

Cite this

Chao, T.-S., Chien, C.-H., Chiao, S. K., Lin, H.-C., Liaw, M. C., Chen, L. P., Huang, T. Y., Lei, T. F., & Chang, C. Y. (1997). Combination effects of nitrogen implantation at S/D extension and N ₂ O oxide on 0.18 μm n- and p-MOSFETs. 316-320. Paper presented at Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications, Taipei, China.

@conference{42166a114e4148369fb235535903a84b,

title = "Combination effects of nitrogen implantation at S/D extension and N 2 O oxide on 0.18 μm n- and p-MOSFETs",

abstract = "In this paper, we report the combination effects of nitrogen implantation at S/D extension and N2O gate oxide on 0.18 μm n- and p-MOSFETs. It is found that Vt-roll-off is enhanced by nitrogen incorporation which also results in large DIBL in deep submicron device. On the other hand, improvement is found for nitrogen incorporation in terms of junction leakage, reliability, and interfacial quality for nMOSFET. Improvement of Qbd, Cinv/Cox and reliability are observed for pMOSFETs.",

author = "Tien-Sheng Chao and Chao-Hsin Chien and Chiao, {S. K.} and Horng-Chih Lin and Liaw, {M. C.} and Chen, {L. P.} and Huang, {T. Y.} and Lei, {T. F.} and Chang, {C. Y.}",

year = "1997",

language = "English",

pages = "316--320",

note = "Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications ; Conference date: 03-06-1997 Through 05-06-1997",

}

Chao, T-S , Chien, C-H, Chiao, SK, Lin, H-C, Liaw, MC, Chen, LP, Huang, TY, Lei, TF & Chang, CY 1997, 'Combination effects of nitrogen implantation at S/D extension and N ₂ O oxide on 0.18 μm n- and p-MOSFETs', Paper presented at Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications, Taipei, China, 3/06/97 - 5/06/97 pp. 316-320.

Combination effects of nitrogen implantation at S/D extension and N ₂ O oxide on 0.18 μm n- and p-MOSFETs. / Chao, Tien-Sheng ; Chien, Chao-Hsin; Chiao, S. K. et al.
1997. 316-320 Paper presented at Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications, Taipei, China.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Combination effects of nitrogen implantation at S/D extension and N 2 O oxide on 0.18 μm n- and p-MOSFETs

AU - Chao, Tien-Sheng

AU - Chien, Chao-Hsin

AU - Chiao, S. K.

AU - Lin, Horng-Chih

AU - Liaw, M. C.

AU - Chen, L. P.

AU - Huang, T. Y.

AU - Lei, T. F.

AU - Chang, C. Y.

PY - 1997

Y1 - 1997

N2 - In this paper, we report the combination effects of nitrogen implantation at S/D extension and N2O gate oxide on 0.18 μm n- and p-MOSFETs. It is found that Vt-roll-off is enhanced by nitrogen incorporation which also results in large DIBL in deep submicron device. On the other hand, improvement is found for nitrogen incorporation in terms of junction leakage, reliability, and interfacial quality for nMOSFET. Improvement of Qbd, Cinv/Cox and reliability are observed for pMOSFETs.

AB - In this paper, we report the combination effects of nitrogen implantation at S/D extension and N2O gate oxide on 0.18 μm n- and p-MOSFETs. It is found that Vt-roll-off is enhanced by nitrogen incorporation which also results in large DIBL in deep submicron device. On the other hand, improvement is found for nitrogen incorporation in terms of junction leakage, reliability, and interfacial quality for nMOSFET. Improvement of Qbd, Cinv/Cox and reliability are observed for pMOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=0030677873&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030677873

SP - 316

EP - 320

T2 - Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications

Y2 - 3 June 1997 through 5 June 1997

ER -

Combination effects of nitrogen implantation at S/D extension and N ₂ O oxide on 0.18 μm n- and p-MOSFETs

Abstract

Conference

Other files and links

Fingerprint

Cite this