Co-sputtered Ru-Ti alloy electrodes for DRAM applications

Ray-Hua Horng; D. S. Wuu; L. H. Wu; S. C. Wei; S. H. Chan; C. C. Leu; T. Y. Huang; S. M. Sze; M. K. Lee

doi:10.1016/S0040-6090(98)01699-X

Co-sputtered Ru-Ti alloy electrodes for DRAM applications

Ray-Hua Horng^*, D. S. Wuu, L. H. Wu, S. C. Wei, S. H. Chan, C. C. Leu, T. Y. Huang, S. M. Sze, M. K. Lee

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Co-sputtered Ru-Ti alloy films were studied for use as a bottom electrode for ferroelectric/paraelectric thin film capacitors. The Ru/Ti ratio in the alloy was found to strongly affect the resistivity, structure formation and thermal stability. The resistivity of the as-deposited films decreases and approaches that of pure Ru metal films as the amount of Ru atoms increases. From X-ray diffraction measurements, it was found that the RuTi phase has formed for the as-deposited sample. The resistivity of alloy thin films is thermally stable as the Ru composition varies from 0.68 to 0.81. It may be due to RuTiO₂ formation at the surface and play an important role in preventing further oxidation of the Ru-enriched layer. This oxide also exhibits conductive behavior. On the other hand, the interface between Ru-enriched alloys and Si substrate was still sharp for the sample treated by rapid thermal processing at 600°C for 1 min. The alloy film with high Ru composition shows excellent thermal stability and barriers against interdiffusion of Si and oxygen.

Original language	English
Pages (from-to)	598-601
Number of pages	4
Journal	Thin Solid Films
Volume	343-344
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01699-X
State	Published - 1999

Keywords

Alloys
Ferroelectric
Paraelectric
Rapid thermal processing
Resistivity

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10.1016/S0040-6090(98)01699-X

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@article{93bdfcd8c28e4b9197bf416f89155b69,

title = "Co-sputtered Ru-Ti alloy electrodes for DRAM applications",

abstract = "Co-sputtered Ru-Ti alloy films were studied for use as a bottom electrode for ferroelectric/paraelectric thin film capacitors. The Ru/Ti ratio in the alloy was found to strongly affect the resistivity, structure formation and thermal stability. The resistivity of the as-deposited films decreases and approaches that of pure Ru metal films as the amount of Ru atoms increases. From X-ray diffraction measurements, it was found that the RuTi phase has formed for the as-deposited sample. The resistivity of alloy thin films is thermally stable as the Ru composition varies from 0.68 to 0.81. It may be due to RuTiO2 formation at the surface and play an important role in preventing further oxidation of the Ru-enriched layer. This oxide also exhibits conductive behavior. On the other hand, the interface between Ru-enriched alloys and Si substrate was still sharp for the sample treated by rapid thermal processing at 600°C for 1 min. The alloy film with high Ru composition shows excellent thermal stability and barriers against interdiffusion of Si and oxygen.",

keywords = "Alloys, Ferroelectric, Paraelectric, Rapid thermal processing, Resistivity",

author = "Ray-Hua Horng and Wuu, {D. S.} and Wu, {L. H.} and Wei, {S. C.} and Chan, {S. H.} and Leu, {C. C.} and Huang, {T. Y.} and Sze, {S. M.} and Lee, {M. K.}",

year = "1999",

doi = "10.1016/S0040-6090(98)01699-X",

language = "English",

volume = "343-344",

pages = "598--601",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Co-sputtered Ru-Ti alloy electrodes for DRAM applications

AU - Horng, Ray-Hua

AU - Wuu, D. S.

AU - Wu, L. H.

AU - Wei, S. C.

AU - Chan, S. H.

AU - Leu, C. C.

AU - Huang, T. Y.

AU - Sze, S. M.

AU - Lee, M. K.

PY - 1999

Y1 - 1999

N2 - Co-sputtered Ru-Ti alloy films were studied for use as a bottom electrode for ferroelectric/paraelectric thin film capacitors. The Ru/Ti ratio in the alloy was found to strongly affect the resistivity, structure formation and thermal stability. The resistivity of the as-deposited films decreases and approaches that of pure Ru metal films as the amount of Ru atoms increases. From X-ray diffraction measurements, it was found that the RuTi phase has formed for the as-deposited sample. The resistivity of alloy thin films is thermally stable as the Ru composition varies from 0.68 to 0.81. It may be due to RuTiO2 formation at the surface and play an important role in preventing further oxidation of the Ru-enriched layer. This oxide also exhibits conductive behavior. On the other hand, the interface between Ru-enriched alloys and Si substrate was still sharp for the sample treated by rapid thermal processing at 600°C for 1 min. The alloy film with high Ru composition shows excellent thermal stability and barriers against interdiffusion of Si and oxygen.

AB - Co-sputtered Ru-Ti alloy films were studied for use as a bottom electrode for ferroelectric/paraelectric thin film capacitors. The Ru/Ti ratio in the alloy was found to strongly affect the resistivity, structure formation and thermal stability. The resistivity of the as-deposited films decreases and approaches that of pure Ru metal films as the amount of Ru atoms increases. From X-ray diffraction measurements, it was found that the RuTi phase has formed for the as-deposited sample. The resistivity of alloy thin films is thermally stable as the Ru composition varies from 0.68 to 0.81. It may be due to RuTiO2 formation at the surface and play an important role in preventing further oxidation of the Ru-enriched layer. This oxide also exhibits conductive behavior. On the other hand, the interface between Ru-enriched alloys and Si substrate was still sharp for the sample treated by rapid thermal processing at 600°C for 1 min. The alloy film with high Ru composition shows excellent thermal stability and barriers against interdiffusion of Si and oxygen.

KW - Alloys

KW - Ferroelectric

KW - Paraelectric

KW - Rapid thermal processing

KW - Resistivity

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U2 - 10.1016/S0040-6090(98)01699-X

DO - 10.1016/S0040-6090(98)01699-X

M3 - Article

AN - SCOPUS:0032662654

SN - 0040-6090

VL - 343-344

SP - 598

EP - 601

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Co-sputtered Ru-Ti alloy electrodes for DRAM applications

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Keywords

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