CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications

T. C. Chang*, T. M. Tsai, Po-Tsun Liu, C. W. Chen, S. T. Yan, H. Aoki, Y. C. Chang, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations

Abstract

In this article, we investigated the impact of chemical mechanical polishing (CMP) on an ultra low dielectric constant (ultra low-k) material Porous-Polysilazane (PPSZ) with slurries of metal polishing during interconnect manufacture process. Since the CMP processing of metals such as TaN and Cu are inevitable steps for interconnect fabrication, we have utilized two types of slurries (marked as TaN and Cu slurries) to evaluate their effects on the dielectric properties of PPSZ films. Electrical and material analyses have shown surface planarity and dielectric properties of PPSZ films will not be degraded during these metal CMP processes. This indicates that the ultra low-k PPSZ films are promising for inter-level dielectric (ILD) applications in ultra large-scale integrated circuits (ULSI) technology.

Original languageEnglish
Pages (from-to)524-530
Number of pages7
JournalThin Solid Films
Volume447-448
DOIs
StatePublished - 30 Jan 2004
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 28 Apr 20022 May 2002

Keywords

  • Chemical mechanical polishing
  • Copper
  • Porous-polysilazane films
  • Ultra low-k

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