CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications

T. C. Chang; T. M. Tsai; Po-Tsun Liu; C. W. Chen; S. T. Yan; H. Aoki; Y. C. Chang; Tseung-Yuen Tseng

doi:10.1149/1.1697907

CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications

T. C. Chang^*, T. M. Tsai, Po-Tsun Liu, C. W. Chen, S. T. Yan, H. Aoki, Y. C. Chang, Tseung-Yuen Tseng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O₂ plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O₂ plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O₂ plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality.

Original language	English
Pages (from-to)	G122-G124
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	6
DOIs	https://doi.org/10.1149/1.1697907
State	Published - 2004

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title = "CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications",

abstract = "The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O2 plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O2 plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O2 plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality.",

author = "Chang, {T. C.} and Tsai, {T. M.} and Po-Tsun Liu and Chen, {C. W.} and Yan, {S. T.} and H. Aoki and Chang, {Y. C.} and Tseung-Yuen Tseng",

year = "2004",

doi = "10.1149/1.1697907",

language = "English",

volume = "7",

pages = "G122--G124",

journal = "Electrochemical and Solid-State Letters",

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publisher = "Electrochemical Society Inc.",

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TY - JOUR

T1 - CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications

AU - Chang, T. C.

AU - Tsai, T. M.

AU - Liu, Po-Tsun

AU - Chen, C. W.

AU - Yan, S. T.

AU - Aoki, H.

AU - Chang, Y. C.

AU - Tseng, Tseung-Yuen

PY - 2004

Y1 - 2004

N2 - The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O2 plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O2 plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O2 plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality.

AB - The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O2 plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O2 plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O2 plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality.

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U2 - 10.1149/1.1697907

DO - 10.1149/1.1697907

M3 - Article

AN - SCOPUS:2642564548

SN - 1099-0062

VL - 7

SP - G122-G124

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications

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