CMOS technology: High performance ALD HfO2-Al2O3laminate MIM capacitors for RF and mixed signal IC applications

Hang Hu, Shi Jin Ding, H. F. Lim, Chunxiang Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, Byung Jin Cho, D. S.H. Chan, Subhash C. Ruslagi, M. B. Yu, C. H. Tung, Anyan Du, Doan My, P. D. Foo, Albert Chin, Dim Lee Kwong

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

    Abstract

    In this paper, high performance ALD HfO2-Al2O3laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm2from 10 kHz to 20 GHz, low leakage current of 7.45x10-9A/cm2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO2-Al2O3laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

    Original languageEnglish
    Title of host publicationSelected Semiconductor Research
    PublisherImperial College Press
    Pages323-326
    Number of pages4
    ISBN (Electronic)9781848164079
    ISBN (Print)9781848164062
    DOIs
    StatePublished - 1 Jan 2011

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