CMOS technology: High performance ALD HfO2-Al2O3laminate MIM capacitors for RF and mixed signal IC applications

Hang Hu; Shi Jin Ding; H. F. Lim; Chunxiang Zhu; M. F. Li; S. J. Kim; X. F. Yu; J. H. Chen; Y. F. Yong; Byung Jin Cho; D. S.H. Chan; Subhash C. Ruslagi; M. B. Yu; C. H. Tung; Anyan Du; Doan My; P. D. Foo; Albert Chin; Dim Lee Kwong

doi:10.1142/9781848164079_0006

CMOS technology: High performance ALD HfO₂-Al₂O₃laminate MIM capacitors for RF and mixed signal IC applications

Hang Hu, Shi Jin Ding, H. F. Lim, Chunxiang Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, Byung Jin Cho, D. S.H. Chan, Subhash C. Ruslagi, M. B. Yu, C. H. Tung, Anyan Du, Doan My, P. D. Foo, Albert Chin, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

1 Scopus citations

Abstract

In this paper, high performance ALD HfO₂-Al₂O₃laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm²from 10 kHz to 20 GHz, low leakage current of 7.45x10^-9A/cm2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO₂-Al₂O₃laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

Original language	English
Title of host publication	Selected Semiconductor Research
Publisher	Imperial College Press
Pages	323-326
Number of pages	4
ISBN (Electronic)	9781848164079
ISBN (Print)	9781848164062
DOIs	https://doi.org/10.1142/9781848164079_0006
State	Published - 1 Jan 2011

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Hu, H., Ding, S. J., Lim, H. F., Zhu, C., Li, M. F., Kim, S. J., Yu, X. F., Chen, J. H., Yong, Y. F., Cho, B. J., Chan, D. S. H., Ruslagi, S. C., Yu, M. B., Tung, C. H., Du, A., My, D., Foo, P. D., Chin, A., & Kwong, D. L. (2011). CMOS technology: High performance ALD HfO₂-Al₂O₃laminate MIM capacitors for RF and mixed signal IC applications. In Selected Semiconductor Research (pp. 323-326). Imperial College Press. https://doi.org/10.1142/9781848164079_0006

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title = "CMOS technology: High performance ALD HfO2-Al2O3laminate MIM capacitors for RF and mixed signal IC applications",

abstract = "In this paper, high performance ALD HfO2-Al2O3laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm2from 10 kHz to 20 GHz, low leakage current of 7.45x10-9A/cm2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO2-Al2O3laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.",

author = "Hang Hu and Ding, {Shi Jin} and Lim, {H. F.} and Chunxiang Zhu and Li, {M. F.} and Kim, {S. J.} and Yu, {X. F.} and Chen, {J. H.} and Yong, {Y. F.} and Cho, {Byung Jin} and Chan, {D. S.H.} and Ruslagi, {Subhash C.} and Yu, {M. B.} and Tung, {C. H.} and Anyan Du and Doan My and Foo, {P. D.} and Albert Chin and Kwong, {Dim Lee}",

year = "2011",

month = jan,

day = "1",

doi = "10.1142/9781848164079_0006",

language = "English",

isbn = "9781848164062",

pages = "323--326",

booktitle = "Selected Semiconductor Research",

publisher = "Imperial College Press",

}

Hu, H, Ding, SJ, Lim, HF, Zhu, C, Li, MF, Kim, SJ, Yu, XF, Chen, JH, Yong, YF, Cho, BJ, Chan, DSH, Ruslagi, SC, Yu, MB, Tung, CH, Du, A, My, D, Foo, PD, Chin, A & Kwong, DL 2011, CMOS technology: High performance ALD HfO₂-Al₂O₃laminate MIM capacitors for RF and mixed signal IC applications. in Selected Semiconductor Research. Imperial College Press, pp. 323-326. https://doi.org/10.1142/9781848164079_0006

TY - CHAP

T1 - CMOS technology

T2 - High performance ALD HfO2-Al2O3laminate MIM capacitors for RF and mixed signal IC applications

AU - Hu, Hang

AU - Ding, Shi Jin

AU - Lim, H. F.

AU - Zhu, Chunxiang

AU - Li, M. F.

AU - Kim, S. J.

AU - Yu, X. F.

AU - Chen, J. H.

AU - Yong, Y. F.

AU - Cho, Byung Jin

AU - Chan, D. S.H.

AU - Ruslagi, Subhash C.

AU - Yu, M. B.

AU - Tung, C. H.

AU - Du, Anyan

AU - My, Doan

AU - Foo, P. D.

AU - Chin, Albert

AU - Kwong, Dim Lee

PY - 2011/1/1

Y1 - 2011/1/1

N2 - In this paper, high performance ALD HfO2-Al2O3laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm2from 10 kHz to 20 GHz, low leakage current of 7.45x10-9A/cm2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO2-Al2O3laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

AB - In this paper, high performance ALD HfO2-Al2O3laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm2from 10 kHz to 20 GHz, low leakage current of 7.45x10-9A/cm2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO2-Al2O3laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

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U2 - 10.1142/9781848164079_0006

DO - 10.1142/9781848164079_0006

M3 - Chapter

AN - SCOPUS:84967493922

SN - 9781848164062

SP - 323

EP - 326

BT - Selected Semiconductor Research

PB - Imperial College Press

ER -

CMOS technology: High performance ALD HfO₂-Al₂O₃laminate MIM capacitors for RF and mixed signal IC applications

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