Close Drain-Source Self-Aligned High Electron Mobility Transistors

N. H. Sheng, Mau-Chung Chang, C. P. Lee, D. L. Miller, R. T. Chen

    Research output: Contribution to journalArticlepeer-review

    2 Scopus citations


    A new self-aligned process for high-electron mobility transistors has been developed. This process uses a photoresist dummy gate to self-align the ohmic contacts. The resulting structure has very closely spaced source and drain. For 1-μm gate transistors, device transconductances as high as 320 ms/mm have been achieved at room temperature.

    Original languageEnglish
    Pages (from-to)11-12
    Number of pages2
    JournalIEEE Electron Device Letters
    Issue number1
    StatePublished - 1 Jan 1986


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