Circular etch pits in ion-implanted amorphous silicon films

King-Ning Tu*, S. I. Tan, B. L. Crowder

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Using a dilute HF solution as the etchant, we found very different etching behaviors between amorphous silicon films prepared by vapor deposition and by ion implantation. The latter are etched preferentially forming circular pits on the surface, but not the former. However, when the evaporated films were subjected to high dosages of ion bombardment and followed by etching, the same kind of circular pits were observed. We conclude that the bombardment of ions can cause weak spots on the amorphous Si surface which possess low resistance to the etching.

Original languageEnglish
Pages (from-to)274-275
Number of pages2
JournalApplied Physics Letters
Issue number6
StatePublished - 1 Dec 1973


Dive into the research topics of 'Circular etch pits in ion-implanted amorphous silicon films'. Together they form a unique fingerprint.

Cite this