The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched- capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.
|Number of pages||7|
|Journal||IEICE Transactions on Electronics|
|State||Published - 1 Jan 2008|
- Bootstrapped switch
- Gate-oxide reliability
- Sample-and-hold amplifier dielectric breakdown
- Switched-capacitor circuit