Circuit performance degradation of switched-capacitor circuit with bootstrapped technique due to gate-oxide overstress in a 130-nm CMOS process

Jung Sheng Chen, Ming-Dou Ker*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Scopus citations

    Abstract

    The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched- capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.

    Original languageEnglish
    Pages (from-to)378-384
    Number of pages7
    JournalIEICE Transactions on Electronics
    VolumeE91-C
    Issue number3
    DOIs
    StatePublished - 1 Jan 2008

    Keywords

    • Bootstrapped switch
    • Gate-oxide reliability
    • Sample-and-hold amplifier dielectric breakdown
    • Switched-capacitor circuit

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