Abstract
The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched- capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.
Original language | English |
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Pages (from-to) | 378-384 |
Number of pages | 7 |
Journal | IEICE Transactions on Electronics |
Volume | E91-C |
Issue number | 3 |
DOIs | |
State | Published - 1 Jan 2008 |
Keywords
- Bootstrapped switch
- Gate-oxide reliability
- Sample-and-hold amplifier dielectric breakdown
- Switched-capacitor circuit