circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm cmos process

Jung Sheng Chen; Ming-Dou Ker

doi:10.1109/RELPHY.2006.251334

circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm cmos process

Jung Sheng Chen^*, Ming-Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process. After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance.

Original language	English
Title of host publication	2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages	705-706
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2006.251334
State	Published - 1 Dec 2006
Event	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States Duration: 26 Mar 2006 → 30 Mar 2006

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
Country/Territory	United States
City	San Jose, CA
Period	26/03/06 → 30/03/06

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10.1109/RELPHY.2006.251334

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@inproceedings{93fa325200f64897a0a880aba05b266b,

title = "circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm cmos process",

abstract = "The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process. After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance.",

author = "Chen, {Jung Sheng} and Ming-Dou Ker",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/RELPHY.2006.251334",

language = "English",

isbn = "0780394992",

series = "IEEE International Reliability Physics Symposium Proceedings",

pages = "705--706",

booktitle = "2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual",

note = "44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 ; Conference date: 26-03-2006 Through 30-03-2006",

}

Chen, JS & Ker, M-D 2006, circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm cmos process. in 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual., 4017275, IEEE International Reliability Physics Symposium Proceedings, pp. 705-706, 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006, San Jose, CA, United States, 26/03/06. https://doi.org/10.1109/RELPHY.2006.251334

circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm cmos process. / Chen, Jung Sheng; Ker, Ming-Dou.
2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual. 2006. p. 705-706 4017275 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Ker, Ming-Dou

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N2 - The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process. After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance.

AB - The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process. After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance.

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M3 - Conference contribution

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T2 - 44th Annual IEEE International Reliability Physics Symposium, IRPS 2006

Y2 - 26 March 2006 through 30 March 2006

ER -

circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm cmos process

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