Chemical-mechanical lift-off process for InGaN epitaxial layers

Ming Shiou Lin; Chia Feng Lin; Wan Chun Huang; Guei Miao Wang; Bing Cheng Shieh; Jing Jie Dai; Shou Yi Chang; D. S. Wuu; Po Liang Liu; Ray-Hua Horng

doi:10.1143/APEX.4.062101

Chemical-mechanical lift-off process for InGaN epitaxial layers

Ming Shiou Lin^*, Chia Feng Lin, Wan Chun Huang, Guei Miao Wang, Bing Cheng Shieh, Jing Jie Dai, Shou Yi Chang, D. S. Wuu, Po Liang Liu, Ray-Hua Horng

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

An InGaN-based light-emitting diode (LED) structure was separated from a GaN/sapphire structure by inserting sacrificial Si-doped InGaN/GaN superlattice layers through a chemical-mechanical lift-off (CMLO) process. The CMLO process consisted of a band-gap-selective photoelectrochemical lateral wet etching process and a mechanical lift-off process. A lower elastic modulus and hardness of the lateral-etched LED structure were measured compared with the conventional LED structure, which indicated a weak mechanical property of the treated LED structure. The photoluminescence blue-shift phenomenon and the Raman redshift phenomenon indicated that the compressive strain from the bottom GaN/sapphire structure was released through the CMLO process.

Original language	English
Article number	062101
Journal	Applied Physics Express
Volume	4
Issue number	6
DOIs	https://doi.org/10.1143/APEX.4.062101
State	Published - 1 Jun 2011

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title = "Chemical-mechanical lift-off process for InGaN epitaxial layers",

abstract = "An InGaN-based light-emitting diode (LED) structure was separated from a GaN/sapphire structure by inserting sacrificial Si-doped InGaN/GaN superlattice layers through a chemical-mechanical lift-off (CMLO) process. The CMLO process consisted of a band-gap-selective photoelectrochemical lateral wet etching process and a mechanical lift-off process. A lower elastic modulus and hardness of the lateral-etched LED structure were measured compared with the conventional LED structure, which indicated a weak mechanical property of the treated LED structure. The photoluminescence blue-shift phenomenon and the Raman redshift phenomenon indicated that the compressive strain from the bottom GaN/sapphire structure was released through the CMLO process.",

author = "Lin, {Ming Shiou} and Lin, {Chia Feng} and Huang, {Wan Chun} and Wang, {Guei Miao} and Shieh, {Bing Cheng} and Dai, {Jing Jie} and Chang, {Shou Yi} and Wuu, {D. S.} and Liu, {Po Liang} and Ray-Hua Horng",

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doi = "10.1143/APEX.4.062101",

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AU - Lin, Ming Shiou

AU - Lin, Chia Feng

AU - Huang, Wan Chun

AU - Wang, Guei Miao

AU - Shieh, Bing Cheng

AU - Dai, Jing Jie

AU - Chang, Shou Yi

AU - Wuu, D. S.

AU - Liu, Po Liang

AU - Horng, Ray-Hua

PY - 2011/6/1

Y1 - 2011/6/1

N2 - An InGaN-based light-emitting diode (LED) structure was separated from a GaN/sapphire structure by inserting sacrificial Si-doped InGaN/GaN superlattice layers through a chemical-mechanical lift-off (CMLO) process. The CMLO process consisted of a band-gap-selective photoelectrochemical lateral wet etching process and a mechanical lift-off process. A lower elastic modulus and hardness of the lateral-etched LED structure were measured compared with the conventional LED structure, which indicated a weak mechanical property of the treated LED structure. The photoluminescence blue-shift phenomenon and the Raman redshift phenomenon indicated that the compressive strain from the bottom GaN/sapphire structure was released through the CMLO process.

AB - An InGaN-based light-emitting diode (LED) structure was separated from a GaN/sapphire structure by inserting sacrificial Si-doped InGaN/GaN superlattice layers through a chemical-mechanical lift-off (CMLO) process. The CMLO process consisted of a band-gap-selective photoelectrochemical lateral wet etching process and a mechanical lift-off process. A lower elastic modulus and hardness of the lateral-etched LED structure were measured compared with the conventional LED structure, which indicated a weak mechanical property of the treated LED structure. The photoluminescence blue-shift phenomenon and the Raman redshift phenomenon indicated that the compressive strain from the bottom GaN/sapphire structure was released through the CMLO process.

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DO - 10.1143/APEX.4.062101

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VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

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Chemical-mechanical lift-off process for InGaN epitaxial layers

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