Chemical-mechanical lift-off process for InGaN epitaxial layers

Ming Shiou Lin*, Chia Feng Lin, Wan Chun Huang, Guei Miao Wang, Bing Cheng Shieh, Jing Jie Dai, Shou Yi Chang, D. S. Wuu, Po Liang Liu, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


An InGaN-based light-emitting diode (LED) structure was separated from a GaN/sapphire structure by inserting sacrificial Si-doped InGaN/GaN superlattice layers through a chemical-mechanical lift-off (CMLO) process. The CMLO process consisted of a band-gap-selective photoelectrochemical lateral wet etching process and a mechanical lift-off process. A lower elastic modulus and hardness of the lateral-etched LED structure were measured compared with the conventional LED structure, which indicated a weak mechanical property of the treated LED structure. The photoluminescence blue-shift phenomenon and the Raman redshift phenomenon indicated that the compressive strain from the bottom GaN/sapphire structure was released through the CMLO process.

Original languageEnglish
Article number062101
JournalApplied Physics Express
Issue number6
StatePublished - 1 Jun 2011


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