Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas

Pei-Wen Li; Q. Wang; E. S. Yang

doi:10.1063/1.107122

Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas

Pei-Wen Li^*, Q. Wang, E. S. Yang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.

Original language	English
Pages (from-to)	1996-1998
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	16
DOIs	https://doi.org/10.1063/1.107122
State	Published - 1992

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title = "Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas",

abstract = "The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.",

author = "Pei-Wen Li and Q. Wang and Yang, {E. S.}",

year = "1992",

doi = "10.1063/1.107122",

language = "English",

volume = "60",

pages = "1996--1998",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas

AU - Li, Pei-Wen

AU - Wang, Q.

AU - Yang, E. S.

PY - 1992

Y1 - 1992

N2 - The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.

AB - The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x-ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride-oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.

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U2 - 10.1063/1.107122

DO - 10.1063/1.107122

M3 - Article

AN - SCOPUS:0043184095

SN - 0003-6951

VL - 60

SP - 1996

EP - 1998

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas

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