Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

C. D. Young*, A. Kerber, Tuo-Hung Hou, E. Cartier, G. A. Brown, G. Bersuker, Y. Kim, C. Lim, J. Gutt, P. Lysaght, J. Bennett, C. H. Lee, S. Gopalan, M. Gardner, P. Zeitzoff, G. Groeseneken, R. W. Murto, H. R. Huff

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

7 Scopus citations

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Material Science

Engineering