Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

C. D. Young*, A. Kerber, Tuo-Hung Hou, E. Cartier, G. A. Brown, G. Bersuker, Y. Kim, C. Lim, J. Gutt, P. Lysaght, J. Bennett, C. H. Lee, S. Gopalan, M. Gardner, P. Zeitzoff, G. Groeseneken, R. W. Murto, H. R. Huff

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

7 Scopus citations

Fingerprint

Dive into the research topics of 'Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures'. Together they form a unique fingerprint.

Engineering & Materials Science